Publications associées à Design constraints on Cherenkov telescopes with Davies-Cotton reflectors

Publications associées (31)

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

Generalization and Personalization of Machine Learning for Multimodal Mobile Sensing in Everyday Life

Lakmal Buddika Meegahapola

A range of behavioral and contextual factors, including eating and drinking behavior, mood, social context, and other daily activities, can significantly impact an individual's quality of life and overall well-being. Therefore, inferring everyday life aspe ...

EPFL2024

Morphological and Material Programability of a Hall-Effect Based Soft Tactile Sensors

Josephine Anna Eleanor Hughes, Sudong Lee

The different receptors in human skin show not only diversity in the stimuli to which they respond, but also variable sensitivity and directionality. This is often determined by their location or morphology, and can play an important role in filtering or a ...

IEEE2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

The Pixel Luminosity Telescope: a detector for luminosity measurement at CMS using silicon pixel sensors

Alexis Kalogeropoulos, Joanna Malgorzata Wanczyk, André Donadon Servelle

The Pixel Luminosity Telescope is a silicon pixel detector dedicated to luminosity measurement at the CMS experiment at the LHC. It is located approximately 1.75 m from the interaction point and arranged into 16 "telescopes", with eight telescopes installe ...

2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Francesco Piro

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Iop Publishing Ltd2023

Integrated electronics for time-of-flight positron emission tomography photodetectors

Andrada Alexandra Muntean

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gen ...

EPFL2023

Interlocking modular microfluidic cooling substrates for future high energy physics experiments

Massimo Angeletti

In high energy physics, semiconductor-based sensors are widely used in particle tracking applications. These sensors are typically glued on low-mass cooling substrates, which guarantee the correct thermal management and, at the same time, minimise their in ...

EPFL2023

Computational Imaging SPAD Cameras

Andrei Ardelean

Vision systems built around conventional image sensors have to read, encode and transmit large quantities of pixel information, a majority of which is redundant. As a result, new computational imaging sensor architectures were developed to preprocess the r ...

EPFL2023

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response

Roberto Guarino, Gianluca Piccinini

Gas sensing systems and devices based on metal oxides are widely spreading due to their high performance in terms of sensor response and relatively low costs. Despite several experimental studies, as well as molecular simulations, are available in the lite ...

Elsevier2022

A Pixel Design of a Branching Ultra-Highspeed Image Sensor

Edoardo Charbon

A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the horizont ...

2021

Direct time-of-flight SPAD image sensors for light detection and ranging

Preethi Padmanabhan

Depth sensing is an increasingly important feature in many applications of consumer, automotive, augmented/virtual reality (AR-VR), space and bio-medical imaging. Long range, high depth resolution, high spatial resolution, and high frame rates are often co ...

EPFL2021

Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum Computers

Andrea Ruffino

Quantum computing promises to revolutionize our lives, achieving unprecedented computational powers and unlocking new possibilities in drug discovery, chemical simulations and cryptography. The fundamental unit of computation of a quantum computer is the q ...

EPFL2021

Theoretical minimum uncertainty of single-molecule localizations using a single-photon avalanche diode array

Edoardo Charbon, Claudio Bruschini, Arin Can Ülkü, Paul Mos

Single-photon avalanche diode (SPAD) arrays can be used for single-molecule localization microscopy (SMLM) because of their high frame rate and lack of readout noise. SPAD arrays have a binary frame output, which means photon arrivals should be described a ...

OPTICAL SOC AMER2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Modeling for Ultra Low Noise CMOS Image Sensors

Raffaele Capoccia

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

EPFL2020

Experimental Verification of the Impact of Analog CMS on CIS Readout Noise

Christian Enz, Assim Boukhayma, Raffaele Capoccia

In this article, the impact of the combination of the column-level gain and the correlated multiple sampling (CMS) on the noise of CMOS image sensor (CIS) readout chains is first analyzed. The theory is then validated experimentally with CIS readout chains ...

2020

Capturing drinking and nightlife behaviours and their social and physical context with a smartphone application - investigation of users' experience and reactivity

Daniel Gatica-Perez, Darshan Santani

Background: Many addictive behaviours are influenced by the context in which they occur, but methods for simultaneously capturing the characteristics of a behaviour and its context are scarce. This study describes a smartphone application developed to docu ...

TAYLOR & FRANCIS LTD2020

A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic Range

Christian Enz, Assim Boukhayma, Antonino Caizzone

This letter introduces a 5-transistors (5T) implementation of CMOS Image Sensors (CIS) pixels enabling the combination of deep sub-electronnoise performance with wide dynamic range (DR). The 5T pixel presents a new technique to reduce the sense node capaci ...

Institute of Electrical and Electronics Engineers2020