Publication

Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Publications associées (28)

Hybrid axial and radial Si-GaAs heterostructures in nanowires

Christophe Ballif, Anna Fontcuberta i Morral, Martin Heiss, Sylvain Dunand, Daniel Rüffer, Sonia Conesa Boj, Eleonora Russo

Hybrid structures are formed from materials of different families. Traditionally, group IV and III-V semiconductors have not been integrated together in the same device or application. In this work we present a new approach for obtaining Si-GaAs hybrid het ...

Royal Society of Chemistry2013

Quantum Wire - Quantum Dot Systems Grown in Inverted Pyramids

Justyna Szeszko

Semiconductor quantum wires (QWRs) and quantum dots (QDs) are nanoscale heterostructures, which form fascinating low-dimensional systems for fundamental studies of quantum-mechanical effects and are attractive candidates for integration into optoelectronic ...

EPFL2013

Accurate determination of charge transition levels of the As-As dimer defect at GaAs/oxide interfaces through hybrid functionals

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli

The energy levels of the As-As dimer defect at GaAs/oxide interfaces are accurately determined within a hybrid functional scheme and aligned with respect to the GaAs band gap. An As-As dimer is constructed at a model interface between GaAs and kappa-Al2O3, ...

2013

Core-Shell GaAs Nanowire p-n Junctions from Growth to Photovoltaic and Optoelectronic Applications

Carlo Colombo

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 15 years, they have been intensively studied for the prospectives that their unique quasi-one dimensional shape off ...

EPFL2012

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Klaus Leifer, Elyahou Kapon, Alok Rudra

We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires ...

2011

Scanning Tunneling Microscopy and Luminescence of Individual Nanostructures

Theresa Lutz

A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in futur ...

EPFL2011

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Efthimios Kaxiras, Jun Ren, Sonia Conesa Boj

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

2011

Local modification of GaAs nanowires induced by laser heating

Anna Fontcuberta i Morral

GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were ...

Institute of Physics2011