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Publications associées (31)

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Light-Responsive Oligothiophenes Incorporating Photochromic Torsional Switches

Kevin Sivula, Emilie Baudat, Muhammad Aiman Bin Rahmanudin Hamdan, Giuseppe Sforazzini, Augustina Jozeliunaite

We present a quaterthiophene and sexithiophene that can reversibly change their effective pi-conjugation length through photoexcitation. The reported compounds make use of light-responsive molecular actuators consisting of an azobenzene attached to a bithi ...

WILEY-V C H VERLAG GMBH2022

Thermodynamics of organic electrochemical transistors

Hsin Tseng, Matteo Cucchi

Though models describing the operating mechanism of organic electrochemical transistors (OECTs) have been developed, these models are unable to accurately reproduce OECT electrical characteristics. Here, the authors report a thermodynamic-based framework t ...

Nature Portfolio2022

On the Modeling of Organic Electrochemical Transistors

Matteo Cucchi

Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledg ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Electronic transport in graphene nanoribbon junctions

Kristians Cernevics

Graphene nanoribbons (GNRs) - one-dimensional strips of graphene - share many of the exciting properties of graphene, such as ballistic transport over micron dimensions, strength and flexibility, but more importantly, they exhibit a tunable band gap that d ...

EPFL2022

Synthesis and properties of heterostructures in nanowires and 2-D materials

Akshay Balgarkashi

Modern solid-state devices were made possible by the discovery of semiconductor heterostructures. Heterostructures offer the ability to fabricate low-dimensional nanostructures such as quantum dots which can restrain carriers in all three-directions. Quant ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Jean-François Carlin, Nicolas Grandjean, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Giovanni Boero, Jürgen Brugger, Xia Liu, Ana Conde Rubio

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

2022

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