Publications associées à Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Multi-Ported GC-eDRAM Bitcell with Dynamic Port Configuration and Refresh Mechanism

Adam Shmuel Teman, Robert Giterman

Embedded memories occupy an increasingly dominant part of the area and power budgets of modern systems-on-chips (SoCs). Multi-ported embedded memories, commonly used by media SoCs and graphical processing units, occupy even more area and consume higher pow ...

MDPI2024

EdgeAI-Aware Design of In-Memory Computing Architectures

Marco Antonio Rios

Driven by the demand for real-time processing and the need to minimize latency in AI algorithms, edge computing has experienced remarkable progress. Decision-making AI applications stand out for their heavy reliance on data-centric operations, predominantl ...

EPFL2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

HetCache: Synergising NVMe Storage and GPU acceleration for Memory-Efficient Analytics

Anastasia Ailamaki, Periklis Chrysogelos, Syed Mohammad Aunn Raza, Hamish Mcniece Hill Nicholson

Accessing input data is a critical operation in data analytics: i) slow data access significantly degrades performance, and ii) storing everything in the fastest medium, i.e., memory, incurs high operational and hardware costs. Further, while GPUs offer in ...

2023

Bit-Line Computing for CNN Accelerators Co-Design in Edge AI Inference

David Atienza Alonso, Giovanni Ansaloni, Alexandre Sébastien Julien Levisse, Flavio Ponzina, Marco Antonio Rios

By supporting the access of multiple memory words at the same time, Bit-line Computing (BC) architectures allow the parallel execution of bit-wise operations in-memory. At the array periphery, arithmetic operations are then derived with little additional o ...

2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Hsin Tseng, Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

A 128-kbit GC-eDRAM With Negative Boosted Bootstrap Driver for 11.3x Lower-Refresh Frequency at a 2.5% Area Overhead in 28-nm FD-SOI

Andreas Peter Burg, Robert Giterman, Emmanuel Nieto Casarrubias, Halil Andac Yigit

Gain-cell embedded DRAM (GC-eDRAM) is a high-density logic-compatible alternative to conventional static random-access memory (SRAM) and embedded DRAM (eDRAM). However, GC-eDRAM suffers from a reduced data retention time (DRT) at deeply-scaled process node ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Zhenyu Wang, Guilherme Migliato Marega, Mukesh Kumar Tripathi, Hyungoo Ji, Asmund Kjellegaard Ottesen

Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector ...

2023

Rebooting Virtual Memory with Midgard

Siddharth Gupta

Virtual Memory (VM) is a critical programming abstraction that is widely used in various modern computing platforms. With the rise of datacenter computing and birth of planet-scale online services, the semantic and capacity requirements from memory have ev ...

EPFL2023

Chaosity: Understanding Contemporary NUMA-architectures

Anastasia Ailamaki, Viktor Sanca, Syed Mohammad Aunn Raza, Hamish Mcniece Hill Nicholson, Andreea Nica

Modern hardware is increasingly complex, requiring increasing effort to understand in order to carefully engineer systems for optimal performance and effective utilization. Moreover, established design principles and assumptions are not portable to modern ...

2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Yanfei Zhao, Juan Francisco Gonzalez Marin, Ahmet Avsar, Cheol Yeon Cheon, Kristians Cernevics, Zhenyu Wang, Mukesh Kumar Tripathi, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

HPCache: memory-efficient OLAP through proportional caching revisited

Anastasia Ailamaki, Periklis Chrysogelos, Hamish Mcniece Hill Nicholson

Analytical engines rely on in-memory data caching to avoid storage accesses and provide timely responses by keeping the most frequently accessed data in memory. Purely frequency- and time-based caching decisions, however, are a proxy of the expected query ...

Springer2023

Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays

Luca Capua

Medical research and technological advancements are heading towards tailored healthcare approaches that prioritize individual needs, allowing for more accurate diagnoses, more effective treatments, and better patient outcomes overall. One such approach is ...

EPFL2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Ultrafast control of emergent quantum matter probed by electron microscopy

Benoît Guilhem Michel Binh Truc

In the quest for controlling materials' properties, light as an external stimulus has a special place as it can create new states of matter and enable their ultrafast manipulation. In particular, spintronics, an exciting emergent field relying on the elect ...

EPFL2023

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Jz -Yuan Juo

Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

EPFL2023