Charge-Based EPFL HEMT Model

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Hydrogen powered vehicles use high-pressure reservoirs from which the gas is transferred to the low-pressure fuel-cell via a classical pressure reduction valve. In these systems no expansion work is recovered and the question is addressed of the potential ...

Sterilization is a prerequisite for biomedical devices before contacting the human body. It guarantees the lack of infection by eliminating microorganisms (i.e., bacteria, spores and fungi). It constitutes the last fabrication process of a biomedical devic ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

An efficient implementation of the capacity design requires high ductility combined with a low overstrength of the critical regions. Conventional timber connections do not generally offer such ideal combination, resulting in modest behaviour and relatively ...

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

In this paper we propose a novel virtual simulation-pilot engine for speeding up air traffic controller (ATCo) training by integrating different state-of-the-art artificial intelligence (AI)-based tools. The virtual simulation-pilot engine receives spoken ...

The application of radio frequency (RF) vacuum electronics for the betterment of the human condition began soon after the invention of the first vacuum tubes in the 1920s and has not stopped since. Today, microwave vacuum devices are powering important app ...

X-ray magnetic circular dichroism, atomic multiplet simulations, and density functional theory calculations are employed to identify criteria for the optimum combination of supporting alkaline earth oxide and adsorption site maximizing the spin lifetimes o ...

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

In 1970, Furth and Yoshikawa (1970 Phys. Fluids 13 2593-6) introduced the scalings of adiabatic plasma compression. Basically, if the shape of the external plasma boundary and the aspect ratio are preserved during the compression, then the density, kinetic ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

Roughness, defined as unevenness of material surfaces, plays an important role in determining how engineering components or natural objects interact with other bodies and their environment. The emergence of fractal roughness on natural and engineered surfa ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

Smart thermostats are increasingly popular in homes and buildings as they improve occupant comfort, lower energy use in heating and cooling systems, and reduce utility bills by automatically adjusting room temperature according to measurements of their bui ...

Charge-Based EPFL HEMT Model

Chattez avec Graph Search

Expansion Work Recovery of Hydrogen for a FC-Truck-Tentative Design of an Expansion Machine

Influence of Different Sterilization Methods on the Surface Chemistry and Electrochemical Behavior of Biomedical Alloys

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Experimental investigations of a new highly ductile hold-down with adaptive stiffness for timber seismic bracing walls

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

A Virtual Simulation-Pilot Agent for Training of Air Traffic Controllers

Frontiers in the Application of RF Vacuum Electronics

The Impact of Lattice Distortions on the Magnetic Stability of Single Atoms: Dy and Ho on BaO(100)

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Shafranov shift correction to the Furth-Yoshikawa scaling of tokamak adiabatic compression

A perspective on multi-channel technology for the next-generation of GaN power devices

How roughness emerges on natural and engineered surfaces

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Efficacy of temporal and spatial abstraction for training accurate machine learning models: A case study in smart thermostats