Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

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We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser device is controll ...

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This ...

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In the same year as Einstein's annus mirabilis, English engineer and physicist John Flemming patented the first rectifying diode, which he called the "Flemming valve". Einstein's work on the photoelectric effect would change our understanding of the nature ...

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

Metal halide perovskites are promising candidates for many classes of different optoelectronic devices. Apart from being a semiconductor, they additionally show ionic conductivity. It expresses itself in slow response times, reversible degradation, and hys ...

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Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Chattez avec Graph Search

Demonstration of a Plasmonic Nonlinear Pseudodiode

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Electron Emission Regimes of Planar Nano Vacuum Emitters

GaN vertical power devices on silicon substrates

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Development of a monolithic near-field optomechanical system

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Metal Halide Perovskites as Mixed Electronic-Ionic Conductors: Challenges and Opportunities-From Hysteresis to Memristivity

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor