Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation

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Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

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Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation

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HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

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