Publications associées à Reliable Gate Driving of SiC MOSFETs With Crosstalk Voltage Elimination and Two-Step Short-Circuit Protection

Publications associées (7)

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

Operation regimes and electrical transport of steep slope Schottky Si-FinFETS

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated Si ...

2017

Modeling Parasitic Vertical PNP in HVCMOS

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

High voltage CMOS active devices inherently have a parasitic vertical bipolar transistor. The parasitic PNP structure can be activated during high-power switching operation causing a potential shift of the substrate. In this work a spice-modeling approach ...

IEEE2015

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

Lorenzo Lugani

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...

EPFL2015

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Institute of Electrical and Electronics Engineers2015

Electron counting at room temperature in an avalanche bipolar transistor

Giovanni Boero, Radivoje Popovic, Marc Lany

We report on real-time detection of single electrons inside a n-p-n bipolar junction transistor at room temperature. Single electrons injected through the base-emitter junction trigger with a high probability the avalanche breakdown of the strongly reverse ...

2008