Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz

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Wireless optoelectronic devices are fabricated by controlling the porosity of p-type silicon, enabling in vivo efficient, non-genetic optoelectronic modulation of peripheral nerve activity. ...

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Crystalline silicon (c-Si) photovoltaics has long been considered energy intensive and costly. Over the past decades, spectacular improvements along the manufacturing chain have made c-Si a low-cost source of electricity that can no longer be ignored. Over ...

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Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

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We investigate bulk and interface recombination in crystalline silicon with p-type fired passivating contacts. These consist of a chemical oxide and an in-situ doped layer of SiCx with low carbon content. Following a rapid thermal annealing to activate the ...

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Material Development for Perovskite/Silicon Tandem Photovoltaics

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The developed world is built on the fact that energy is readily available and functionally infinite. The electricity from the wall, the gas at the station, and the heat in our homes are reliable and low-cost. But this comfort is so far only possible throug ...

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Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

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Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

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One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In the ...

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Liquid metal infiltration of silicon based alloys into porous carbonaceous materials. Part II: Experimental verification of modelling approaches by infiltration of Si-Zr alloy into idealized microchannels

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Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

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In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

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Monolithic Perovskite-Silicon Tandem Solar Cells: From the Lab to Fab?

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This review focuses on monolithic 2-terminal perovskite-silicon tandem solar cells and discusses key scientific and technological challenges to address in view of an industrial implementation of this technology. The authors start by examining the different ...

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Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

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Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

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