Novel experimental investigation of supercapacitor ageing during combined life-endurance and power-cycling tests

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Publications associées (30)

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Jessy Anthony Ançay, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Igor Stolichnov, Mihai Adrian Ionescu, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Band Filling and Cross Quantum Capacitance in Ion-Gated Semiconducting Transition Metal Dichalcogenide Monolayers

Christophe Berthod, Helmuth Berger, Thierry Giamarchi, Haijing Zhang

Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in ...

2019

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Paul Muralt, Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

IEEE2019

An Ultra-Low Power PPG and mm-Resolution ToF PPD-Based CMOS Chip Towards All-in-One Photonic Sensors

Christian Enz, Assim Boukhayma, Antonino Caizzone

This paper presents a CMOS photonic sensor covering multiple applications from ambient light sensing to time resolved photonic sensing. The sensor is made of an array of gated pinned photodiodes (PPDs) averaged using binning and passive switched-capacitor ...

2019

Nonlinear graphene quantum capacitors for electro-optics

Akshay Koottandavida, Sina Khorasani

Owing to its peculiar energy dispersion, the quantum capacitance property of graphene can be exploited in a two- dimensional layered capacitor configuration. Using graphene and boron nitride, respectively, as the electrodes and the insulating dielectric, a ...

Springer Nature2017

Static negative capacitance of a ferroelectric nano-domain nucleus

Nava Setter, Pavel Mokry, Tomas Sluka

Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...

Amer Inst Physics2017

Perovskite solar cell - electrochemical double layer capacitor interplay

Michael Graetzel, Nikolaos Vlachopoulos, Ulf Anders Hagfeldt, Juan-Pablo Correa-Baena, Michael Saliba, Silver Hamill Turren Cruz

We demonstrate that by a proper design of a system comprising a perovskite solar cell (PSC) coupled to an electrochemical double-layer capacitor (EDLC), it is possible to simultaneously improve both the PSC and EDLC performance and outperform each single u ...

Elsevier2017

Domain nucleation behavior in ferroelectric films with thin and ultrathin top electrodes versus insulating top layers

Nava Setter, Ludwig Feigl

The effect of varying the thickness of Pt top electrodes made by the electron beam induced deposition technique on the domain nucleation characteristics of Pb(Zr,Ti)O-3 films has been investigated by piezoresponse force microscopy. The advantage of this ex ...

Elsevier Science Sa2017

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