Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

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Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its ...

This dataset accompanies the publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films" published in Light: Science & Applications (https://doi.org/10.1038/s41377-024-01408-2). The data can be used to reproduce plots 1-4 ...

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

In this study, we place a strong emphasis on understanding the ultrafast dynamics of carrier recombination pathways in p-type ZnO, especially in the midgap region. Synthesizing and controlling the properties of p-type ZnO remains a pivotal yet challenging ...

In this thesis, we conduct a comprehensive investigation into structural instabilities of both elastic and magneto-elastic beams and shells, resulting in a creative proposal to design a programmable braille reader. Methodologically, we combine numerical si ...

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

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III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

While bottom-up synthesis allows for precise control over the properties of graphene nanoribbons (GNRs), the use of certain precursor molecules can result in edge defects, such as missing benzene rings that resemble a 'bite'. We investigate the adverse eff ...

Nonradiative recombination in Cu(In,Ga)Se2 (CIGS) solar cells has long been attributed to the antisite defects MCu (M = In, Ga), but the underlying mechanism is still elusive. Using rigorous first-principles calculations, we demonstrate that the antisites ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

This paper presents the main results of COST Action PEARL PV, aiming at finding connections between the observed performance of monitored PV systems and degradation causes and failure modes according to literature with a focus on the most dominant technolo ...

We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...

Autotrophic nitrate-reducing Fe(II)-oxidizing (NRFeOx) microorganisms fix CO2 and oxidize Fe(II) coupled to denitrification, influencing carbon, iron, and nitrogen cycles in pH-neutral, anoxic environments. However, the distribution of electrons from Fe(II ...

We investigate bulk and interface recombination in crystalline silicon with p-type fired passivating contacts. These consist of a chemical oxide and an in-situ doped layer of SiCx with low carbon content. Following a rapid thermal annealing to activate the ...

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

Monocrystalline 1.7 eV Mg0.13Cd0.87Te/MgxCd1-xTe (x > 0.13) double heterostructure (DH) solar cells with varying Mg compositions in the barrier layers are grown by molecular beam epitaxy. A Mg0.13Cd0.87Te/Mg0.37Cd0.63Te DH solar cell featuring abrupt inter ...

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

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Quantum-mechanical effects in photoluminescence from thin crystalline gold films

Dataset to accompany publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films"

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Ultrafast carrier dynamics and insights in defect mechanism of p-type colloidal ZnO QDs

Instabilities in Elastic and Magneto-Elastic Beams and Shells: from Shell Buckling to the Design of a Programmable Braille Reader

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

GeSn as next-generation material for short-wave infrared single-photon detection

Scalable Approaches to III-V Nanowires for Photodetection

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

Chemical Trend of Nonradiative Recombination in Cu(In,Ga)Se2 Alloys

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Performance and degradation in silicon PV systems under outdoor conditions in relation to reliability aspects of silicon PV modules - Summary of results of COST Action PEARL PV

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Metabolic Performance and Fate of Electrons during Nitrate-Reducing Fe(II) Oxidation by the Autotrophic Enrichment Culture KS Grown at Different Initial Fe/N Ratios

Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Monocrystalline 1.7-eV MgCdTe solar cells