Publications associées à MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

Ming-Lo Wu

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

Computational Imaging SPAD Cameras

Andrei Ardelean

Vision systems built around conventional image sensors have to read, encode and transmit large quantities of pixel information, a majority of which is redundant. As a result, new computational imaging sensor architectures were developed to preprocess the r ...

EPFL2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Ashish Sharma, Francesco Piro

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Iop Publishing Ltd2023

Electronic readout of DNA amplification in nanoliter chambers. Strategies towards highly parallel semiconductor-based nucleic acid amplification testing

Saurabh Tomar

Polymerase chain reaction (PCR) has been the most significant driver in the field of nucleic acid testing (NAT) since its invention. Popularized as an abbreviation by the Covid-19 pandemic, PCR-based methods are the gold standard in the field of diagnostic ...

EPFL2023

500 MHz high resolution proximity sensors with fully integrated digital counter

Giovanni Boero, Nergiz Sahin Solmaz, Reza Farsi

We report on the design and characterization of two inductive proximity sensors based on LC oscillators operating at 500 MHz. The distance from the target is obtained by measuring the oscillation frequency variation. Both sensors contain an off-chip LC res ...

ELSEVIER SCI LTD2023

Integrated electronics for time-of-flight positron emission tomography photodetectors

Andrada Alexandra Muntean

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gen ...

EPFL2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Stefano Michelis, Gennaro Termo

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

The Pixel Luminosity Telescope: a detector for luminosity measurement at CMS using silicon pixel sensors

Alexis Kalogeropoulos, Valérie Scheurer, Joanna Malgorzata Wanczyk, André Donadon Servelle

The Pixel Luminosity Telescope is a silicon pixel detector dedicated to luminosity measurement at the CMS experiment at the LHC. It is located approximately 1.75 m from the interaction point and arranged into 16 "telescopes", with eight telescopes installe ...

2023

Front-End Circuits for Radiation-Hard Monolithic CMOS Sensors targeting High-Energy Physics Applications

Francesco Piro

Monolithic pixel sensors integrate the sensor matrix and readout in the same silicon die, and therefore present several advantages over the more largely used hybrid detectors in high-energy physics. They offer an easier detector assembly, lower cost, lower ...

EPFL2023

Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications

Christian Enz, Yves Bellouard, Olivier Bernard, Assim Boukhayma, Andrea Kraxner

During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying suitable laser pro ...

2023

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Claudio Bruschini, Edoardo Charbon, Arin Can Ülkü, Andrei Ardelean, Paul Mos, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Mihai Adrian Ionescu, Shokoofeh Sheibani

Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum Computers

Andrea Ruffino

Quantum computing promises to revolutionize our lives, achieving unprecedented computational powers and unlocking new possibilities in drug discovery, chemical simulations and cryptography. The fundamental unit of computation of a quantum computer is the q ...

EPFL2021

A Pixel Design of a Branching Ultra-Highspeed Image Sensor

Edoardo Charbon

A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the horizont ...

2021

Cryogenic MOSFET Modeling for Large-Scale Quantum Computing

Arnout Lodewijk M Beckers

Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative mi ...

EPFL2021

A Comparison of optimal measurement-system design with engineering judgement for bridge load testing

Ian Smith, Numa Joy Bertola

Due to conservative approaches in construction design and practice, infrastructure often has hidden reserve capacity. When quantified, this reserve has potential to improve decisions related to asset management. Field measurements, collected through load t ...

2021

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Luca Selmi, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

CMOS-Based Readout and Control Electronics for Microgrippers

Marco Mattavelli, Diego Ruben Barrettino

This paper presents the design of an application-specific integrated circuit (ASIC) with all the necessary electronic blocks to read out and control Conjugate Surfaces Flexure Hinge (CSFH) microgrippers. The ASIC was fabricated using a high-voltage 0.35 mu ...

IEEE2020