A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Quantum computing is expected to complement classical von-Neumann architectures in solving problems beyond the reach of conventional digital machines. This new model of computation leverages the rich complexity of many-body quantum systems to perform compu ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gen ...

Over the last decades, implantable neural interfaces have been extensively explored and effectively deployed to address neurological and mental health disorders. The existing solutions present several limitations. Firstly, the physical size of the implanta ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

Chattez avec Graph Search

Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

3D Printing of Customizable Transient Bioelectronics and Sensors

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Electronic metadevices for terahertz applications

A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology

Integrated electronics for time-of-flight positron emission tomography photodetectors

Miniaturised, Wireless and Distributed Neural Interface Toward Cortical Visual Prosthesis

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography