Wide-field time-gated SPAD imager for phasor-based FLIM applications

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Fluorescence lifetime imaging microscopy (FLIM) is an imaging modality often used to monitor biochemical properties of a cell or a tissue. In addition to conventional fluorescence microscopy features, such as selective labeling and non-invasiveness, FLIM e ...

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

In the last few years, the field of lightweight cryptography has seen an influx in the number of block ciphers and hash functions being proposed. In the past there have been numerous papers that have looked at circuit level implementation of block ciphers ...

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

Progress in optics technology has enriched our daily lives in many ways. Various types of single-photon detector technologies have emerged in the last century. Among these, single-photon avalanche diode (SPAD) technology outperforms other detectors for its ...

A medical system comprising a first wearable device configured to be worn by a first hand of a user, a second wearable device configured to be worn by a second hand of the user, a first sensor device arranged on the first wearable device, the first sensor ...

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

Binary logic gates are building blocks of computing machines, in particular, electronic computers. One variant is the programable logic gate, also known as the reconfigurable logic gate, in which the logical function implemented can be modified. In this pa ...

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

Wide-field time-gated SPAD imager for phasor-based FLIM applications

Chattez avec Graph Search

Large-Format Time-Gated SPAD Cameras for Real-Time Phasor-Based FLIM

Heterostructure design and field management in III-N high-electron mobility electronic devices

A Deeper Look at the Energy Consumption of Lightweight Block Ciphers

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Megapixel SPAD cameras for time-resolved applications

A medical system and method using a pair of gloves equipped with physiological sensors

Modeling for Ultra Low Noise CMOS Image Sensors

Logic-in-memory based on an atomically thin semiconductor

Reconfigurable Logic Gates Based on Programable Multistable Mechanisms

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect