AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

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Quantum computing is expected to complement classical von-Neumann architectures in solving problems beyond the reach of conventional digital machines. This new model of computation leverages the rich complexity of many-body quantum systems to perform compu ...

A compact platform to integrate emitters in a cavity-like support is to embed quantum dots (QDs) in a photonic crystal (PhC) structure, making them promising candidates for integrated quantum photonic circuits. The emission properties of QDs can be modifie ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterizatio ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

This presentation starts with a general description of the electronic energy structure of insulators. This is the background of basic semiconductor features including the bands and the forbidden gap, the effective mass, the mobility and doping with donors ...

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

Thin film aluminum nitride (AlN) stands out as a promising material for integrated photonics due to its wide bandgap of 6.1 eV, facilitating efficient operation across diverse spectral ranges. Its inherent electro-optic and nonlinear optical properties mak ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Recent advancements in ultra-low-loss silicon nitride (Si3N4)-based photonic integrated circuits have surpassed fiber lasers in coherence and frequency agility. However, high manufacturing costs of DFB and precise control requirements, as required for self ...

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compa ...

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

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Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

Spatial quantum-interference landscapes of multi-site-controlled quantum dots coupled to extended photonic cavity modes

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Semiconductors, general properties

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Ultraviolet to mid-infrared optical properties of sputtered Al(Sc)N-on-SiO2 thin films and experimental demonstration of AlN integrated photonic devices in the telecom C-band

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Piezoelectrically tunable, narrow linewidth photonic integrated extended-DBR lasers

Development and characterization of N2O-plasma oxide layers for high-temperature p-type passivating contacts in silicon solar cells

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2