Publications associées à Dataset for 'Organic Electrochemical Transistors Printed from Degradable Materials as Disposable Biochemical Sensors'

Publications associées (10)

Additive manufacturing of flexible, biodegradable drug implants for sustained multi-drug release into the cochlea

Sensorineural hearing loss is a profound form of deafness, arising from damage to cochlear hair cells, which can be treated by limited clinical options such as cochlear implants. However, the implantation procedure carries the inherent risk of electrode in ...

2025

The rise of aerial additive manufacturing in construction: a review of material advancements

Mirko Kovac, Yusuf Furkan Kaya

The construction industry has recently increased the adoption of additive manufacturing (AM, also known as 3D-printing) technologies. This review paper presents the state of the art of ground-based AM systems in construction, focusing comprehensively on de ...

2024

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Biodegradation of water-soluble and water-dispersible polymers for agricultural, consumer, and industrial applications-Challenges and opportunities for sustainable materials solutions

Harm-Anton Klok, Alice Boarino

The development of more sustainable material solutions is one of the key challenges today. New materials are subject to an overall risk assessment of which their impact on the environment is an important aspect. The biodegradability of a material may suppo ...

WILEY2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Charge-based modeling of field effect transistors, Make it easy

Jean-Michel Sallese

In this presentation, we revisit some charge-voltage dependences for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate ...

IEEE2021

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Tzu-Hsien Shen, Catherine Erine, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Mihai Adrian Ionescu, Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020