High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

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Publications associées (32)

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Positive Streamer Initiation in SF6/CO2 Based on Zener's Field Ionization

Guang-Yu Sun

In this study, experiments were performed to measure the inception and breakdown voltages of SF6/CO2 mixed gases with varying mixing ratios at two different pressures (1 and 2 bar). Using the preliminary data obtained from the experiments, a 3D particle mo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Electrode Impact on the Electrical Breakdown of Dielectric Elastomer Thin Films

Herbert Shea, Fabio Beco Albuquerque

Dielectric Elastomer Actuators (DEAs) enable the realization of energy-efficient and compact actuator systems. DEAs operate at the kilovolt range with typically microampere-level currents and hence minimize thermal losses in comparison to low voltage/high ...

MDPI2023

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Jonathan Emanuel Thomet

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

On Energy Control of Modular Multilevel Converters

Milan Utvic

Owing to the advancements in the area of power electronics, efficient and flexible ac to dc conversion is made possible, bringing back into focus the idea of the dc power transmission at various voltage levels. Several technical and economical factors advo ...

EPFL2023

Dynamic control of high-voltage actuator arrays by light-pattern projection on photoconductive switches

Herbert Shea, Amir Firouzeh, Vesna Bacheva, Edouard Franck Vincent Gustave Leroy, Aiste Balciunaite

The ability to control high-voltage actuator arrays relies, to date, on expensive microelectronic processes or on individual wiring of each actuator to a single off-chip high-voltage switch. Here we present an alternative approach that uses on-chip photoco ...

SPRINGERNATURE2023

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Zhengwen Jiang, Gian Luca Barbruni, Yihe Zhao

Label-free biosensors, combined with miniaturized micro-electromechanical sensory platforms, offer an attractive solution for real-time and facile monitoring of biomolecules due to their high sensitivity and selectivity without the need for specifically la ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

On-Demand Cross-Linkable Bottlebrush Polymers for Voltage- Driven Artificial Muscles

Frank Nüesch, Francis Owusu, Yeerlan Adeli

Dielectric elastomer actuators (DEAs) generate motion resembling natural muscles in reliability, adaptability, elongation, and frequency of operation. They are highly attractive in implantable soft robots or artificial organs. However, many applications of ...

AMER CHEMICAL SOC2023

A review of the modeling approaches of the lightning M-component with special attention to their current and electric field characteristics

Farhad Rachidi-Haeri, Marcos Rubinstein, Carlo Alberto Nucci, Mohammad Azadifar, Qi Li

In this paper, we present the characteristics of current, electric fields and modeling approaches of lightning M-component mode of charge transfer. We consider both the classical M-components (occurring after return strokes) and M-component-type ICC (Initi ...

Elsevier2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Hsin Tseng, Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

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