Publications associées à Semiconductors, general properties

Publications associées (13)

On-site and intersite Hubbard corrections in magnetic monolayers: The case of FePS3 and CrI3

Nicola Marzari, Iurii Timrov, Edward Baxter Linscott, Seyedeh Fatemeh Haddadi Givi

Hubbard-corrected density-functional theory has proven to be successful in addressing self-interaction errors in 3D magnetic materials. However, the effectiveness of this approach for 2D magnetic materials has not been extensively explored. Here, we use PB ...

Amer Physical Soc2024

Ultraviolet to mid-infrared optical properties of sputtered Al(Sc)N-on-SiO2 thin films and experimental demonstration of AlN integrated photonic devices in the telecom C-band

Luis Guillermo Villanueva Torrijo, Hernán Furci

Thin film aluminum nitride (AlN) stands out as a promising material for integrated photonics due to its wide bandgap of 6.1 eV, facilitating efficient operation across diverse spectral ranges. Its inherent electro-optic and nonlinear optical properties mak ...

2024

Automated mixing of maximally localized Wannier functions into target manifolds

Nicola Marzari, Giovanni Pizzi, Junfeng Qiao

Maximally localized Wannier functions (MLWFs) are widely used in electronic-structure calculations. We have recently developed automated approaches to generate MLWFs that represent natural tight-binding sets of atomic-like orbitals; these describe accurate ...

Nature Portfolio2023

EuCd2As2: A Magnetic Semiconductor

Ivica Zivkovic, Jan Hugo Dil, Michele Puppin, Jian Rui Soh, Fei Guo

EuCd2As2 is now widely accepted as a topological semimetal in which a Weyl phase is induced by an external magnetic field. We challenge this view through firm experimental evidence using a combination of electronic transport, optical spectroscopy, and exci ...

2023

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Towards high-throughput many-body perturbation theory: efficient algorithms and automated workflows

Giovanni Pizzi, Antimo Marrazzo, Junfeng Qiao

The automation of ab initio simulations is essential in view of performing high-throughput (HT) computational screenings oriented to the discovery of novel materials with desired physical properties. In this work, we propose algorithms and implementations ...

NATURE PORTFOLIO2023

Single molecule fluorescence and phosphorescence studies using a scanning tunneling microscope

Abhishek Grewal

This thesis investigates novel single-molecule luminescence phenomena at their inherent, sub-molecular length scale. The microscopic understanding of luminescence processes will be crucial for the continued improvement of organic optoelectronic and semicon ...

EPFL2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Andras Kis, Andreas Schueler, Elison de Nazareth Matioli, Anna Krammer, Mohammad Samizadeh Nikooytabalvandani, Philip Johannes Walter Moll, Reza Soleiman Zadeh Ardebili, Guilherme Migliato Marega

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

Nature Research2022

Extremely large magnetoresistance in the "ordinary" metal ReO3

Oleg Yazyev, Quansheng Wu, Shengnan Zhang

The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS ...

AMER PHYSICAL SOC2021

Origin of large magnetoresistance in the topological nonsymmorphic semimetal TaSe3

Helmuth Berger, Jean-Philippe Ansermet, Oleg Yazyev, Alberto Crepaldi, Quansheng Wu, Michele Puppin, Gabriel Albert Autes, Gianmarco Gatti, Shengnan Zhang, Daniel Gosalbez Martinez

TaSe3 is a layered van der Waals semimetal with several inverted band gaps throughout the entire Brillouin zone and nontrivial Z(2) topological indices, which place it at the boundary between a strong and a weak topological phase. Our transport experiments ...

2021

Synthesis of murunskite single crystals: A bridge between cuprates and pnictides

László Forró, Henrik Moodysson Rønnow, Ivica Zivkovic, Ana Akrap, Edoardo Martino, Davor Tolj, Trpimir Ivsic, Konstantin Semeniuk

Numerous contemporary investigations in condensed matter physics are devoted to high temperature (high-T-c) cuprate superconductors. Despite its unique effulgence among research subjects, the enigma of the high-T-c mechanism still persists. One way to adva ...

ELSEVIER2021

Visualizing the multifractal wave functions of a disordered two-dimensional electron gas

Klaus Kern

The wave functions of a disordered two-dimensional electron gas at the quantum-critical Anderson transition are predicted to exhibit multifractal scaling in their real space amplitude. We experimentally investigate the appearance of these characteristics i ...

AMER PHYSICAL SOC2021