Organic n-channel transistors based on core-cyanated perylene carboxylic diimide derivatives

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Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

Organic n-channel transistors based on core-cyanated perylene carboxylic diimide derivatives

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