Domain engineering of the transverse piezoelectric coefficient in perovskite ferroelectrics

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (29)

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

Jan Hugo Dil

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, alpha-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to g ...

Nature Portfolio2022

Development of Thin Film Lithium Niobate Shear Bulk Acoustic Wave Resonators

Soumya Yandrapalli

RF MEMS piezoelectric acoustic resonators are the essential building blocks for RF filters used in RF front-end modules for wireless mobile communication due to their compact size in the MHz-GHz frequency range, high Quality factors and large relative band ...

EPFL2022

Microscopic picture of paraelectric perovskites from structural prototypes

Nicola Marzari, Giovanni Pizzi, Boris Kozinsky, Michele Kotiuga

We highlight with first-principles molecular dynamics the persistence of intrinsic < 111 > Ti off-centerings for BaTiO3 in its cubic paraelectric phase. Intriguingly, these are inconsistent with the Pm (3) over barm space group often used to atomistically ...

AMER PHYSICAL SOC2022

Defect-induced magnetism in homoepitaxial SrTiO3

Mihai Adrian Ionescu, Daesung Park

Along with recent advancements in thin-film technologies, the engineering of complex transition metal oxide heterostructures offers the possibility of creating novel and tunable multifunctionalities. A representative complex oxide is the perovskite stronti ...

AIP Publishing2022

Facet Engineering for Stable, Efficient Perovskite Solar Cells

Michael Graetzel

Facet engineering is an important strategy for tuning the physical, chemical, and electronic properties of a crystal surface, and it also provides an effective route to improve the device performance in many fields. Complex crystal structures with rough mo ...

AMER CHEMICAL SOC2022

Structure-property relationships and mixed conductivity in layered hybrid perovskites based on phenyl-derived spacers

Algirdas Ducinskas

Hybrid halide perovskites are currently one of the most studied semiconductors. However, due to poor intrinsic and extrinsic stability, further developments to commercialize devices based on hybrid halide perovskites are limited. Many different strategies ...

EPFL2022

A formula for the admittance of laterally excited bulk wave resonators (XBARs)

Victor Plessky, Luis Guillermo Villanueva Torrijo, Soumya Yandrapalli

The recently invented laterally excited bulk wave resonators (XBARs) demonstrate outstanding parameters suitable for the design of low loss filters for the fifth generation of mobile phones. The operation of XBARs can be interpreted as an excitation of ant ...

WILEY2021

Anion Exchange-Induced Crystal Engineering via Hot-Pressing Sublimation Affording Highly Efficient and Stable Perovskite Solar Cells

Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Tom Theodorus Antonius Lummen, Hujiang Shen, Bin Ding

Crystalline, dense, and uniform perovskite thin films are crucial for achieving high-power conversion efficiency solar cells. Herein, a universal method of fabricating highly crystalline and large-grain perovskite films via crystal engineering is demonstra ...

2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Page 2 sur 2