A terahertz quantum cascade. laser grown by low-pressure metalorganic vapor phase epitaxy

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Photonic integrated circuits (PICs) have revolutionized optical communication and precision metrology by enabling compact, scalable, and high-performance optical systems. However, conventional integrated laser sources suffer from limitations such as poor c ...

A compact platform to integrate emitters in a cavity-like support is to embed quantum dots (QDs) in a photonic crystal (PhC) structure, making them promising candidates for integrated quantum photonic circuits. The emission properties of QDs can be modifie ...

Recent advancements in ultra-low-loss silicon nitride (Si3N4)-based photonic integrated circuits have surpassed fiber lasers in coherence and frequency agility. However, high manufacturing costs of DFB and precise control requirements, as required for self ...

Magnetophononics, the modulation of magnetic interactions by driving infrared-active lattice excitations, is emerging as a key mechanism for the ultrafast dynamical control of both semiclassical and quantum spin systems by coherent light. We demonstrate th ...

III-nitride membranes offer promising perspectives and improved device designs in photonics, electronics, and optomechanics. However, the removal of the growth substrate often leads to a rough membrane surface, which increases scattering losses in optical ...

High-speed actuation of laser frequency(1)is critical in applications using lasers and frequency combs(2,3), and is a prerequisite for phase locking, frequency stabilization and stability transfer among optical carriers. For example, high-bandwidth feedbac ...

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Measuring the turn-on delay of diode lasers provides useful information on carrier recombination dynamics, particularly Auger recombination, essential for their design for high-speed modulation and power-efficient performance. Here we present a rigorous, c ...

We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrat ...

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab ...

A theoretical description of photoacoustic spectroscopy generated by wavelength modulation of a semiconductor laser source is reported for a Lorentzian absorption line. This model describes the first- and second-harmonic photoacoustic signals produced by a ...

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...

A terahertz quantum cascade. laser grown by low-pressure metalorganic vapor phase epitaxy

Chattez avec Graph Search

Low-noise, frequency-agile photonic integrated lasers

Spatial quantum-interference landscapes of multi-site-controlled quantum dots coupled to extended photonic cavity modes

Piezoelectrically tunable, narrow linewidth photonic integrated extended-DBR lasers

Strong-coupling magnetophononics: Self-blocking, phonon-bitriplons, and spin-band engineering

Smooth GaN membranes by polarization-assisted electrochemical etching

Monolithic piezoelectric control of soliton microcombs

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Ultrafast spectroscopy of wide bandgap semiconductor nanostructures

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers

Controlling the aspect ratio of quantum dots: From columnar dots to quantum dots

Lattice-matched GaN-InAlN waveguides at lambda=1.55 mu m grown by metal-organic vapor phase epitaxy

Wavelength modulation photoacoustic spectroscopy: Theoretical description and experimental results

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials