Semiconductor tunneling device

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The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

EuCd2As2 is now widely accepted as a topological semimetal in which a Weyl phase is induced by an external magnetic field. We challenge this view through firm experimental evidence using a combination of electronic transport, optical spectroscopy, and exci ...

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledg ...

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

Semiconductor tunneling device

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Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Semiconductor-based device architectures in multimaterial fibers

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

EuCd2As2: A Magnetic Semiconductor

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Energy Efficient Sensing using Steep Slope Devices

A perspective on multi-channel technology for the next-generation of GaN power devices

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

On the Modeling of Organic Electrochemical Transistors

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs