Publications associées à Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Publications associées (35)

Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

Quantum computing is expected to complement classical von-Neumann architectures in solving problems beyond the reach of conventional digital machines. This new model of computation leverages the rich complexity of many-body quantum systems to perform compu ...

EPFL2025

Design Trade-offs of Second Harmonic Minimization in Solid-State Transformers

Amin Darvishzadeh, Drazen Dujic

In two-stage solid-state transformers (SSTs) equipped with LLC DC/DC converters for galvanic isolation, fixed-frequency open-loop operation of LLC stages has been a straightforward and prevailing design choice. Meanwhile, with a closed-loop-operated LLC co ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Contemporary Logic Synthesis: with an Application to AQFP Circuit Optimization

Siang-Yun Lee

Electronic devices play an irreplaceable role in our lives. With the tightening time to market, exploding demand for computing power, and continuous desire for smaller, faster, less energy-consuming, and lower-cost chips, computer-aided design for electron ...

EPFL2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires

Konstantin Malchow

Nonlinear photoluminescence (N-PL) is a broadband photon emission arising from a nonequilibrium heated electron distribution generated at the surface of metallic nanostructures by ultrafast pulsed laser illumination. N-PL is sensitive to surface morphology ...

Amer Chemical Soc2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

In-situ atomic level observation of the strain response of graphene lattice

Klaus Kern, Jz -Yuan Juo

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility ...

Nature Portfolio2023

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Gennaro Termo, Jean-Michel Sallese, Adil Koukab

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays

Luca Capua

Medical research and technological advancements are heading towards tailored healthcare approaches that prioritize individual needs, allowing for more accurate diagnoses, more effective treatments, and better patient outcomes overall. One such approach is ...

EPFL2023

Charging and Electric Field Effects on Hydrogen Molecules Physisorbed on Graphene

Klaus Kern, Shai Mangel, Alessio Scavuzzo, Tobias Wollandt

Molecular hydrogen adsorbed on graphene was investigated by analyzing rotational excitation spectra obtained with a gate-tunable scanning tunneling microscope (STM). Through the shift of the rotational excitation energy, the tunability of physisorbed H2 on ...

AMER CHEMICAL SOC2023

Nano-MOSFET - Foundation of Quantum Computing Part I

Edoardo Charbon

As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023