Junctionless nano-electro-mechanical resonant transistor

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Electrochemical and morphological engineering of 2D materials for nanopore sensing

Martina Lihter

Nanopores are nanometer-sized holes that were initially proposed for DNA sequencing. Several years ago sequencing was made possible with biological nanopores. However, solid-state nanopores have plenty of advantages to offer compared to their biological co ...

EPFL2020

Nanoplasma-enabled picosecond switches for ultrafast electronics

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera, Minghua Zhu, Giovanni Santoruvo

The broad applications of ultrawide-band signals and terahertz waves in quantum measurements, imaging and sensing techniques, advanced biological treatments, and very-high-data-rate communications have drawn extensive attention to ultrafast electronics. In ...

2020

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

Danick Briand, Jaemin Kim, Alessio Mancinelli

Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...

AMER CHEMICAL SOC2020

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

Francesco Bellando

In recent years, sweat has gained increasing attention from the scientific community as a new analyte for health monitoring. The main advantage with respect to the "Gold Standard" for laboratory analysis, i.e. blood, is of course the possibility of perform ...

EPFL2020

Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p-n junctions

Gabriel Aeppli

Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. ...

NATURE PUBLISHING GROUP2020

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Christophe Ballif, Andrea Ingenito, Philipp Friedrich Hermann Löper

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...

ELSEVIER2019

Double-gate field-effect-transistor based biosensor

Mihai Adrian Ionescu, Hoël Maxime Guérin

The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustabl ...

2019

Internal electrical and strain fields influence on the electrical tunability of epitaxial Ba0.7Sr0.3TiO3 thin films

Nava Setter, Silviu Cosmin Sandu, Barbara Maraston Fraygola, Sarunas Bagdzevicius

Perpetual demand for higher transfer speed and ever increasing miniaturization of radio and microwave telecommunication devices demands new materials with high electrical tunability. We have investigated built in electrical and strain fields' influence on ...

Amer Inst Physics2016