III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

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Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its ...

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Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

Chattez avec Graph Search

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Quantum-mechanical effects in photoluminescence from thin crystalline gold films

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Dataset to accompany publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films"

3D Printing of Customizable Transient Bioelectronics and Sensors

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Static and Dynamic Voltage Balancing for an IGCT-Based Resonant DC Transformer

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