Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Quantum computing is expected to complement classical von-Neumann architectures in solving problems beyond the reach of conventional digital machines. This new model of computation leverages the rich complexity of many-body quantum systems to perform compu ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

The manuscript describes the development of a spatial Agent-based Simulation to model the effect of public policies on private houseowner’s decisions concerning their heating system. The methodology utilized comprises of an empirical survey to determine th ...

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

In light of the challenges posed by climate change and the goals of the Paris Agreement, electricity generation is shifting to a more renewable and decentralized pattern, while the operation of systems like buildings is increasingly electrified. This calls ...

The aircraft assembly system is highly complex involving different stakeholders from multiple domains. The design of such a system requires comprehensive consideration of various industrial scenarios aiming to optimize key performance indicators. Tradition ...

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compa ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

We present a numerical model for the approximation of multiphase flows with free surfaces and strong interfacial effects. The model relies on the multiphase incompressible Navier-Stokes equations, and includes surface tension effects on the interfaces betw ...

Computer simulations are often used as support material for science education, as they can engage students through inquiry-based learning, promote their active interaction in the experimentation phase, and help them visualize abstract concepts. For instanc ...

Medical research and technological advancements are heading towards tailored healthcare approaches that prioritize individual needs, allowing for more accurate diagnoses, more effective treatments, and better patient outcomes overall. One such approach is ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

The goal of this work is to use anisotropic adaptive finite elements for the numerical simulation of aluminium electrolysis. The anisotropic adaptive criteria are based on a posteriori error estimates derived for simplified problems. First, we consider an ...

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Chattez avec Graph Search

Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Lithium tantalate photonic integrated circuits for volume manufacturing

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Spatial Agent-Based Modelling and Simulation to Evaluate on Public Policies for Energy Transition

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Quantifying the Unknown: Data-Driven Approaches and Applications in Energy Systems

An aircraft assembly process formalism and verification method based on semantic modeling and MBSE

Development and characterization of N2O-plasma oxide layers for high-temperature p-type passivating contacts in silicon solar cells

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

A cut-cell method for the numerical simulation of 3D multiphase flows with strong interfacial effects

Teacher-Mediated and Student-Led Interaction with a Physics Simulation: Effects on the Learning Experience

Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Adaptive Finite Elements with Large Aspect Ratio. Application to Aluminium Electrolysis