Publications associées à Hot Stencils : A New Path for Resistless Nanopatterning

Publications associées (8)

Semiconductor-based device architectures in multimaterial fibers

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

New Insights Into the I/V Hysteretic Characteristics of Memristive Biosensors

Sandro Carrara, Ata Jedari Golparvar, Gian Luca Barbruni, Junrui Chen, Kapil Bhardwaj

Over the past decade, significant advancements have been made in the study of silicon nanowires (SiNWs). These nanoscaled devices can exhibit a memristive type of hysteresis in the current/voltage (I/V) plane that has been utilized in the biosensors leadin ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Lucas Güniat, Nicolas Tappy, Santhanu Panikar Ramanandan, Didem Dede, Akshay Balgarkashi

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

Memristive Biosensors based on Full-size Antibodies and Antibody Fragments

Giovanni De Micheli, Sandro Carrara, Ioulia Tzouvadaki

For the first time memristive biosensors developed by the incorporation of scAbs (single-chain antibody fragments) enabling label-free detection of free Prostate Specific Antigen (fPSA) for early-stage detection of prostate cancer (PC) are reported. In add ...

Elsevier2019

Multi-material Optoelectronic Fiber Devices

Fabien Sorin, Alexis Gérald Page, Wei Yan, Yunpeng Qu, Marco Volpi

The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In partic ...

SPIE-Int Soc Optical Engineering2017

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

Giovanni De Micheli, Yusuf Leblebici, Davide Sacchetto

In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effec ...

Institute of Electrical and Electronics Engineers2012

Synthesis parameter space of bismuth catalyzed germanium nanowires

Anna Fontcuberta i Morral

The synthesis parameter space of bismuth catalyzed germanium nanowires by chemical vapor deposition is determined. The process window for high aspect ratio nanowires is found to be extremely narrow. The optimal conditions are found to be 300 degrees C and ...

American Institute of Physics2009