Hot Stencils : A New Path for Resistless Nanopatterning

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Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

Over the past decade, significant advancements have been made in the study of silicon nanowires (SiNWs). These nanoscaled devices can exhibit a memristive type of hysteresis in the current/voltage (I/V) plane that has been utilized in the biosensors leadin ...

For the first time memristive biosensors developed by the incorporation of scAbs (single-chain antibody fragments) enabling label-free detection of free Prostate Specific Antigen (fPSA) for early-stage detection of prostate cancer (PC) are reported. In add ...

The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In partic ...

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effec ...

The synthesis parameter space of bismuth catalyzed germanium nanowires by chemical vapor deposition is determined. The process window for high aspect ratio nanowires is found to be extremely narrow. The optimal conditions are found to be 300 degrees C and ...

Hot Stencils : A New Path for Resistless Nanopatterning

Chattez avec Graph Search

Semiconductor-based device architectures in multimaterial fibers

New Insights Into the I/V Hysteretic Characteristics of Memristive Biosensors

Memristive Biosensors based on Full-size Antibodies and Antibody Fragments

Multi-material Optoelectronic Fiber Devices

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

Synthesis parameter space of bismuth catalyzed germanium nanowires