Publications associées à A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies

Publications associées (14)

Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

Quantum computing is expected to complement classical von-Neumann architectures in solving problems beyond the reach of conventional digital machines. This new model of computation leverages the rich complexity of many-body quantum systems to perform compu ...

EPFL2025

Ultraviolet to mid-infrared optical properties of sputtered Al(Sc)N-on-SiO2 thin films and experimental demonstration of AlN integrated photonic devices in the telecom C-band

Luis Guillermo Villanueva Torrijo, Hernán Furci

Thin film aluminum nitride (AlN) stands out as a promising material for integrated photonics due to its wide bandgap of 6.1 eV, facilitating efficient operation across diverse spectral ranges. Its inherent electro-optic and nonlinear optical properties mak ...

2024

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Pasquale Scarlino, Fabian Oppliger, Franco De Palma

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

2024

A review of recent developments on CMOS single-photon avalanche diode-based cameras for biomedical time-resolved applications

Edoardo Charbon, Claudio Bruschini

All-solid-state time-resolved cameras based on CMOS single-photon avalanche diode (SPAD) arrays have made very significant advances since the fabrication of the first CMOS SPADs back in 2003. These natively digital sensors are now available in large format ...

SPIE2024

Disentangling 1/f noise from confined ion dynamics

Théo Denis Tobias Emmerich

Ion transport through biological and solid-state nanochannels is known to be a highly noisy process. The power spectrum of current fluctuations is empirically known to scale like the inverse of frequency, following the long-standing yet poorly understood H ...

ROYAL SOC CHEMISTRY2023

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Nonlinear Integrated Photonics for Ranging Applications

Anton Lukashchuk

This thesis explores the application of recent advances in integrated photonics to the field of light detection and ranging (LiDAR). The progress in photonic integration allows for unprecedented levels of light manipulation on micrometer scales through the ...

EPFL2023

Silicon spin qubits from laboratory to industry

Edoardo Charbon

Quantum computation (QC) is one of the most challenging quantum technologies that promise to revolutionize data computation in the long-term by outperforming the classical supercomputers in specific applications. Errors will hamper this quantum revolution ...

IOP Publishing Ltd2023

Synthesis of SFQ Circuits with Compound Gates

Giovanni De Micheli, Alessandro Tempia Calvino, Rassul Bairamkulov

Rapid single-flux quantum (RSFQ) is one of the most advanced superconducting technologies with the potential to supplement or replace conventional VLSI systems. However, scaling RSFQ systems up to VLSI complexity is challenging due to fundamental differenc ...

IEEE2023

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Andras Kis, Andreas Schueler, Elison de Nazareth Matioli, Anna Krammer, Mohammad Samizadeh Nikooytabalvandani, Philip Johannes Walter Moll, Reza Soleiman Zadeh Ardebili, Guilherme Migliato Marega

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

Nature Research2022

CMOS-based microanalysis systems

Sandro Carrara, Tugba Kilic, Seyedeh Sara Ghoreishizadeh

Complementary Metal-Oxide Semiconductor (CMOS)-based microanalysis involves a wide variety of devices, technologies, methods, and approaches, as extensively detailed in scientific literature. For example, we can find the use of CMOS- in investigations on p ...

Elsevier2022

Scaling silicon-based quantum computing using CMOS technology

Edoardo Charbon

As quantum processors grow in complexity, attention is moving to the scaling prospects of the entire quantum computing system, including the classical support hardware. Recent results in high-fidelity control of individual spins in silicon, combined with d ...

NATURE PORTFOLIO2021