Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

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Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

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Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

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