Publications associées à Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Publications associées (33)

CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics

Hung-Wei Li, Mihai Adrian Ionescu, Igor Stolichnov, Niccolò Martinolli, Cyrille Masserey

This work presents a CMOS-compatible multilayer platform integrating energy storage and tunable varactor functionality within a compact system. By co-integrating antiferroelectric (AFE) and dielectric (DE) layers, the design achieves tunability up to 28%, ...

IEEE2025

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Pasquale Scarlino, Fabian Oppliger, Franco De Palma

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

2024

Dataset for "Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates"

Danick Briand, Luis Guillermo Villanueva Torrijo, Morgan Mc Kay Monroe

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the recent publication entitled “Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper ...

Zenodo2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Pyroelectricity in poled all-organic polar polynorbornene/polydimethylsiloxane-based stretchable electrets

Frank Nüesch, Francis Owusu

Pyroelectricity in a recently developed all-organic composite electret with a polar polynorbornene-based filler and polydimethylsiloxane (PDMS) matrix has been studied with the help of thermal and dielectric techniques. Measurement of the pyroelectric p co ...

Royal Society of Chemistry2024

Highly dispersed nanomaterials in polymer matrix via aerosol-jet-based multi-material 3D printing

Michael James Henry Smith

Polymer-based nanocomposites emerged in the 1960s as a groundbreaking approach to advanced materials. By incorporating robust, durable, and multifunctional nanomaterials into a polymer matrix, the performance of nanocomposites has significantly surpassed t ...

Elsevier2024

Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

Danick Briand, Luis Guillermo Villanueva Torrijo, Morgan Mc Kay Monroe

The development of fully solution-processed, biodegradable piezoelectrics is a critical step in the development of green electronics towards the worldwide reduction of harmful electronic waste. However, recent printing processes for piezoelectrics are hind ...

2023

Synthesis of polysiloxane elastomers modified with sulfonyl side groups and their electromechanical response

Holger Frauenrath, Yauhen Sheima

Dielectric elastomer transducers are elastic capacitors that respond to mechanical or electrical stress. They can be used in applications such as millimeter-sized soft robots and harvesters of the energy contained in ocean waves. The dielectric component o ...

Royal Society of Chemistry2023

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Bottlebrush Dielectric Elastomers with Improved Properties for Actuation

Yeerlan Adeli

Dielectric elastomer actuators (DEA) are elastic capacitors composed of a pair of compliant electrodes and a soft dielectric elastomer film sandwiched in between. This kind of stretchable capacitors can be actuated when charged, can generate electricity fr ...

EPFL2023

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Inversing the actuation cycle of dielectric elastomer actuators for a facial prosthesis

Yves Perriard, Yoan René Cyrille Civet, Paolo Germano, Thomas Guillaume Martinez, Stefania Maria Aliki Konstantinidi, Alexis Boegli, Quentin Philippe Mario De Menech

Dielectric Elastomer Actuators (DEAs) are a type of smart material described as compliant capacitors. They show impressive performances as soft actuators, such as a high strain and fast response. Nonetheless, replicating natural muscle function with DEAs h ...

Society of Photo-Optical Instrumentation Engineers (SPIE)2024

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Elastomers Based on Polynorbornene with Polar Polysiloxane Brushes for Soft Transducer Applications

Frank Nüesch, Yeerlan Adeli

Elastomers based on cross-linked bottlebrush polymers combine an extreme softness at low strains with a strain-stiffening effect, which makes them attractive as active components in dielectric elastomer actuators (DEA). Their main disadvantage concerns the ...

Wiley-VHCA AG2024

Stored Energies and Q-Factor Expressed in Material Derivatives

Anja Skrivervik

Stored energies of radiating systems have generated research interest for several decades due to their relationship with Q-factor and fractional bandwidth. In this letter, material derivatives are used to provide a new interpretation of widely used stored ...

2024

Tailor-made Piezoelectric Elastomer Materials

Francis Owusu

Recent advancements in miniature devices with higher computational capabilities and ultralow power consumption have accelerated the development of wearable sensors, actuators, and energy harvesters everywhere. The ultimate aim of such a technological revol ...

EPFL2023

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024