Thin-layer black phosphorus/GaAs heterojunction p-n diodes (vol 106, 233110, 2015)

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The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

AlInN/GaN unpassivated High Electron Mobility Transistor (HEMT) on Sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possib ...

Thin-layer black phosphorus/GaAs heterojunction p-n diodes (vol 106, 233110, 2015)

Chattez avec Graph Search

Low-Profile ESPAR Using Metamaterial-Inspired Structure

Demonstration of a Plasmonic Nonlinear Pseudodiode

Instability of p-i-n perovskite solar cells under reverse bias

Organic Thin-Film Transistors and Circuits Fabricated by Stencil Lithography on Full-Wafer Flexible Substrates

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications