Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Zero-depth nanopores present a promising solution to the challenges associated with ultrathin membranes used in solid-state resistive pulse sensors for DNA sequencing. Most existing fabrication methods are either complex or lack the nanoscale precision required. In this study, we introduce a cost-effective approach that combines PDMS molding at the intersection of silicon micro-blades with an innovative high-resolution nano-positioning technique. These blades are created through photolithography and a two-step KOH wet etching process, allowing for the formation of sub-50 nm 3D rhombic zero-depth nanopores featuring large vertex angles. To address the limitations of SEM imaging—such as dielectric charging and deformation of PDMS membranes under electron beam exposure—we devised a finite element model (FEM) that correlates electrical conductance with pore size and electrolyte concentration. This model aligns closely with experimental data, yielding a mean absolute percentage error of 3.69%, thereby enabling real-time indirect sizing of the nanopores based on the measured conductance. Additionally, we identified a critical channel length beyond which pore resistance becomes negligible, facilitating a linear relationship between conductance and pore diameter. The nanopores produced using this method exhibited a 2.4-fold increase in conductance compared to earlier designs, highlighting their potential for high-precision DNA sequencing applications.