Publications associées à Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Publications associées (12)

Spatial quantum-interference landscapes of multi-site-controlled quantum dots coupled to extended photonic cavity modes

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

A compact platform to integrate emitters in a cavity-like support is to embed quantum dots (QDs) in a photonic crystal (PhC) structure, making them promising candidates for integrated quantum photonic circuits. The emission properties of QDs can be modifie ...

2025

A dephasing sweet spot with enhanced dipolar coupling

Pasquale Scarlino

Two-level systems (TLSs) are the basic units of quantum computers but face a trade-off between operation speed and coherence due to shared coupling paths. Here, we investigate a TLS given by a singlet-triplet (ST+) transition. We identify a magnetic-field ...

2025

Plasmonic biosensor enabled by resonant quantum tunnelling

Hatice Altug, Ivan Sinev, Mikhail Masharin

Metasurfaces provide an ideal platform for optical sensing because they produce strong light-field confinement and enhancement over extended regions that allow us to identify deep-subwavelength layers of organic and inorganic molecules. However, the requir ...

Nature Publishing Group2025

Enhancing lifetime, forecasting, and economic benefits of photovoltaic technologies undergoing UV-induced degradation with optical filtering

Christophe Ballif, Antonin Faes, Christian Michael Wolff, Marion Solange Madeleine Dussouillez

Ultraviolet-induced degradation (UV-ID) of various PV cell types was analyzed under optical UV filters with different cutoff wavelengths. Cell types studied included interdigitated back contact (IBC), passivated emitter and rear totally diffused (PERT), an ...

2025

Structural and magnetic properties of β-Li2IrO3 after grazing-angle focused ion beam thinning

Christian Rüegg

Manipulating the size and orientation of quantum materials is often used to tune emergent phenomena, but precise control of these parameters is also necessary from an experimental point of view. Various synthesis techniques already exist, such as epitaxial ...

2025

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Pasquale Scarlino, Fabian Oppliger, Franco De Palma

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

2024

Decoupling Interlayer Spacing and Cation Dipole on Exciton Binding Energy in Layered Halide Perovskites

Rosario Scopelliti, Nicolas Grandjean, Kevin Sivula, Jun Ho Yum, Yeonju Kim, Simon Nussbaum, Han-Hee Cho, Danxuan Chen

Layered halide perovskites (LHPs) are emerging semiconductor materials due to their superior environmental stability compared to that of traditional halide perovskites. While LHPs have tunable optoelectronic properties, quantum and dielectric confinement e ...

2024

Hybrid organic/metal-oxide shells on semiconductor nanocrystals via colloidal atomic layer deposition

Ona Segura Lecina

The escalating energy demand and the imperative necessity to reduce the carbon footprint require transformative approaches to energy conversion. Materials chemistry plays a pivotal role in addressing these global challenges by developing novel materials fo ...

EPFL2024

Controlling photothermoelectric directional photocurrents in graphene with over 400 GHz bandwidth

Yesim Koyaz

Photodetection in the near- and mid-infrared spectrum requires a suitable absorbing material able to meet the respective targets while ideally being cost-effective. Graphene, with its extraordinary optoelectronic properties, could provide a material basis ...

NATURE PORTFOLIO2024

Ultraviolet to mid-infrared optical properties of sputtered Al(Sc)N-on-SiO2 thin films and experimental demonstration of AlN integrated photonic devices in the telecom C-band

Luis Guillermo Villanueva Torrijo, Hernán Furci

Thin film aluminum nitride (AlN) stands out as a promising material for integrated photonics due to its wide bandgap of 6.1 eV, facilitating efficient operation across diverse spectral ranges. Its inherent electro-optic and nonlinear optical properties mak ...

2024

Piezoelectric actuation for integrated photonics

Tobias Kippenberg, Rui Ning Wang, Johann Emmeram Riemensberger, Anat Siddharth, Andrey Voloshin, Viacheslav Snigirev, Terence Albert Emile Blésin, Andrea Bancora, Vladimir Shadymov

Recent decades have seen significant advancements in integrated photonics, driven by improvements in nanofabrication technology. This field has been developed from integrated semiconductor lasers and low-loss waveguides to optical modulators, enabling the ...

Optica Publishing Group2024

Development and characterization of N2O-plasma oxide layers for high-temperature p-type passivating contacts in silicon solar cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Sofia Libraro, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç, David Fernando Reyes Vasquez

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compa ...

American Chemical Society (ACS)2024