Publications associées à EuCd2As2: A Magnetic Semiconductor

Publications associées (7)

On-site and intersite Hubbard corrections in magnetic monolayers: The case of FePS3 and CrI3

Nicola Marzari, Iurii Timrov, Edward Baxter Linscott, Seyedeh Fatemeh Haddadi Givi

Hubbard-corrected density-functional theory has proven to be successful in addressing self-interaction errors in 3D magnetic materials. However, the effectiveness of this approach for 2D magnetic materials has not been extensively explored. Here, we use PB ...

Amer Physical Soc2024

Semiconductors, general properties

Giorgio Margaritondo

This presentation starts with a general description of the electronic energy structure of insulators. This is the background of basic semiconductor features including the bands and the forbidden gap, the effective mass, the mobility and doping with donors ...

Elsevier2024

Decoupling Interlayer Spacing and Cation Dipole on Exciton Binding Energy in Layered Halide Perovskites

Rosario Scopelliti, Nicolas Grandjean, Kevin Sivula, Jun Ho Yum, Yeonju Kim, Simon Nussbaum, Han-Hee Cho, Danxuan Chen

Layered halide perovskites (LHPs) are emerging semiconductor materials due to their superior environmental stability compared to that of traditional halide perovskites. While LHPs have tunable optoelectronic properties, quantum and dielectric confinement e ...

2024

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Pasquale Scarlino, Fabian Oppliger, Franco De Palma

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

2024

Development and characterization of N2O-plasma oxide layers for high-temperature p-type passivating contacts in silicon solar cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Sofia Libraro, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç, David Fernando Reyes Vasquez

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compa ...

American Chemical Society (ACS)2024

Modulation of Ionically Generated Space Charge Effects at Hybrid Perovskite and Oxide Interfaces via Surface Modification

Michael Graetzel

Interfacial space charges significantly influence transport and recombination of charge carriers in optoelectronic devices. Due to the mixed ionic-electronic conducting properties of halide perovskites, not only electronic effects, but also ionic interacti ...

Wiley2024

Towards high-throughput many-body perturbation theory: efficient algorithms and automated workflows

Giovanni Pizzi, Antimo Marrazzo, Junfeng Qiao

The automation of ab initio simulations is essential in view of performing high-throughput (HT) computational screenings oriented to the discovery of novel materials with desired physical properties. In this work, we propose algorithms and implementations ...

NATURE PORTFOLIO2023