Publications associées à High mobility… to have a job ?

Publications associées (11)

Entre droit et injonction à la mobilité : discussion d'une 'motilité' "raisonnable" comme ressource pour l'insertion professionnelle

In many countries, payment of unemployment benefit is conditional on active job-seeking on the part of recipients, who are required to accept any "reasonable" job offers made to them (Dalloz 2008). In France, this notion of "Reasonable Job Offer" (ORE) has ...

EPFL2024

Work and High Mobility in Europe

Emmanuel Pierre Jean Ravalet

The high work-related mobilities concern a significant proportion of the active population and condition novel lifestyles. This chapter describes the practices and discourses of the people concerned by these high mobilities, challenge a number of preconcep ...

ISTE Wiley2023

Electronic Structure of Few-Layer Black Phosphorus from & mu;-ARPES

Nicola Marzari, Marco Gibertini, Samuel Poncé, Christophe Berthod

Black phosphorus (BP) stands out among two-dimensional(2D) semiconductorsbecause of its high mobility and thickness dependent direct band gap.However, the quasiparticle band structure of ultrathin BP has remainedinaccessible to experiment thus far. Here we ...

AMER CHEMICAL SOC2023

Professional cyclic high mobility: modelling state transitions

Michel Bierlaire, Vincent Kaufmann, Emmanuel Pierre Jean Ravalet, Matthieu Marie Cochon de Lapparent, Alexis Gumy

This paper aims to investigate the combination of exogenous and dynamic endogenous variables in professional high mobility patterns. It is based on a panel dataset of the Job Mobilities and Family Lives in Europe research project conducted between 2007 and ...

2017

Job-related “high mobility” in times of economic crisis: Analysis from four European countries

Emmanuel Pierre Jean Ravalet, Stéphanie Vincent, Yann Francis Eric Dubois

Social and spatial mobility is a core value of late modern societies. Increasing numbers of people are practicing work-related high mobility, such as daily or weekly long-distance commuting and frequent work-related travel. In this article we propose to ex ...

2017

Thickness-dependent mobility in two-dimensional MoS2

Andras Kis, Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attrac ...

Royal Soc Chemistry2015

Contacts and Environmental Effects in Two-Dimensional MoS2 Field-Effect Transistors

Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...

EPFL2014

Public Urban Transport, Mobility Patterns and Social Exclusion : The Case of Santiago de Chile

Regina Witter

What are the social impacts of a new, less efficient public transport system in a city that is known for its inequality concerning access to daily activities and participation in urban life? More precisely, what are the implications of a re-regulated trans ...

EPFL2012

Streched organic transistors maintain mobility on flexible substrates

Mihai Adrian Ionescu, Jürgen Brugger, Andreea Veronica Savu, Katrin Sidler Arnet, Nenad Cvetkovic

Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After on ...

Elsevier2012

En quête d'habitat : choix résidentiels et différenciation des modes de vie familiaux en Suisse

Marie-Paule Thomas

This doctoral thesis is based on the observation that the individualization of society that is taking place today has led to new differentiations within the domains of lifestyle and residential choice. Our main hypothesis was that lifestyle influences resi ...

EPFL2011

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N ...

2006