Publications associées à Sub-meV Photoluminescence Linewidth and >106 cm2/Vs Electron Mobility in AlGaAs/GaAs Quantum Wells Grown by Metallorganic Vapor Phase Epitaxy on Slightly Misoriented Substrates

Publications associées (16)

Direct high-temperature MOCVD growth of GaN on foreign substrates

GaN-based devices are ubiquitous in everyday life, ranging from InGaN/GaN light-emitting diodes (LEDs) for illumination to AlGaN/GaN high-electron-mobility transistors for compact power supplies. Nevertheless, despite the tremendous development in the past ...

EPFL2024

Murunskite - a new class of functional material

Davor Tolj

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

Wiley2021

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Georgios Kampitsis

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

2020

Integrated Gallium Phosphide Photonics

Katharina Schmeing

The integration of new materials mediating light-matter interaction in nanoscale devices is a persistent goal in nanophotonics. One of these materials is Gallium phosphide, which offers an attractive combination of a high refractive index (n=3.05 at a wave ...

EPFL2019

Field-induced charge separation dynamics in monolayer MoS2

Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Yen-Cheng Kung

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

Iop Publishing Ltd2017

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires

Jean-Daniel Ganière, Gwénolé Jean Jacopin, Hua Zhang, Mehran Shahmohammadi

We report on the direct observation of the diffusion of carriers in graded InGaN/GaN quantum wells in a nanowire. By probing the local dynamics at the nanoscale, along the wire for different temperatures between 4 and 250 K, we conclude that this diffusion ...

American Chemical Society (ACS)2016

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Heidi Andrea Potts, Federico Matteini, Fauzia Jabeen

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

Contacts and Environmental Effects in Two-Dimensional MoS2 Field-Effect Transistors

Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...

EPFL2014

Quantum Wire - Quantum Dot Systems Grown in Inverted Pyramids

Justyna Szeszko

Semiconductor quantum wires (QWRs) and quantum dots (QDs) are nanoscale heterostructures, which form fascinating low-dimensional systems for fundamental studies of quantum-mechanical effects and are attractive candidates for integration into optoelectronic ...

EPFL2013

Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation

Elyahou Kapon, Alok Rudra, Marc-André Dupertuis, Daniel Oberli

Quantum dots (QDs) of high symmetry (e.g., C3v) have degenerate bright exciton states, unlike QDs of C2v symmetry, making them intrinsically suitable for the generation of entangled photon pairs. Deviations from C3v symmetry are detected in real QDs by pol ...

American Physical Society2010

InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases

Nicolas Grandjean, Jean-François Carlin

Al2O3 thin films were deposited by a metal organic chemical vapour deposition on InAIN/GaN heterostructures using Ar or NH3 as a carrier gas. Effects of NH3 and Ar carrier gases on the electrical and structural properties of Al2O3/InAIN/GaN HEMT devices we ...

2009

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...

EPFL2007

Solid state p-n heterojunction sensitized photovoltaic solar cell with electron and hole conductors

Michael Graetzel, Udo Bach, Robert Plass

A solid state p-n heterojunction comprising an electron conductor and a hole conductor; it further comprises a sensitising semiconductor, said sensitizing semiconductor being located at an interface between said electron conductor and said hole conductor. ...

(Ecole Polytechnique Federale de Lausanne (EPFL), Switz.).2005

Solid state heterojunction and solid state sensitized photovoltaic cell

Michael Graetzel, Udo Bach, Robert Plass

A solid state p-n heterojunction comprising an electron conductor and a hole conductor it further comprises a sensitising semiconductor, said sensitizing semiconductor being located at an interface between said electron conductor and said hole conductor. I ...

2005