Cryogenic quantum computer control signal generation using high-electron-mobility transistors

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With the development of wide band-gap devices, Silicon Carbide (SiC) semiconductor devices in 10 kV–15 kV voltage class offer potentials in medium-voltage (MV) systems. To ensure reliable operation of these MV SiC devices, gate driver power supplies must m ...

As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gen ...

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

With the proliferation of ultrahigh-speed mobile networks and internet-connected devices, along with the rise of artificial intelligence (AI)(1), the world is generating exponentially increasing amounts of data that need to be processed in a fast and effic ...

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

Cryogenic device models are essential for the reliable design of the cryo-CMOS electronic interface necessary to build future large-scale quantum computers. This paper reports the characterization of the drain-current mismatch of NMOS and PMOS devices fabr ...

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Accurate and low-noise generation and amplification of microwave signals are required for the manipulation and readout of quantum bits (qubits). A fault-tolerant quantum computer operates at deep cryogenic temperatures (i.e.,

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

This research presents a discrete-time transmission line model based on the propagation of travelling waves. In this approach, the transmission line is emulated by means of many interconnected unit delay cells implemented with switched-capacitor (SC) circu ...

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

We present a general simulation framework for assessing the performance of nanoscale devices that combines several powerful and widely used open-source codes, and based on minimal but chemically accurate tight-binding Hamiltonians obtained from density-fun ...

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

Cryogenic quantum computer control signal generation using high-electron-mobility transistors

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Gate Driver Power Supply With Low-Capacitance-Coupling and Constant Output Voltage for Medium-Voltage SiC MOSFETs

Nano-MOSFET - Foundation of Quantum Computing Part I

Integrated electronics for time-of-flight positron emission tomography photodetectors

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Parallel convolutional processing using an integrated photonic tensor core

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Benefits and Challenges of Designing Cryogenic CMOS RF Circuits for Quantum Computers

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Switched-capacitor high-speed emulator for real-time fault location in electrical power systems

Field-induced charge separation dynamics in monolayer MoS2

Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices

Design Methodologies and CAD for Emerging Nanotechnologies