Publications associées à Gate Driver Power Supply With Low-Capacitance-Coupling and Constant Output Voltage for Medium-Voltage SiC MOSFETs

Publications associées (25)

Direct laser writing of electronically conductive microstructures within soft hydrogel substrates

Veronica Navello, Stéphanie Lacour, Esther Amstad, Outman Akouissi, Lorenzo Lucherini

Hydrogels have emerged as promising materials for bioelectronic interfaces due to their tissue-like properties and high-water content. However, conventional hydrogels often suffer from poor electrical conductivity and mechanical stability, limiting their p ...

2025

Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

Kirsten Emilie Moselund, Simone Iadanza

In this work, we provide important parameters to take into account when fabricating in-plane III-V photodetectors (PDs) integrated on silicon (Si) using template-assisted selective epitaxy (TASE). Their performance has previously been demonstrated, and her ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2024

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Johann Nicolaï Stachurski

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...

EPFL2024

Cryogenic quantum computer control signal generation using high-electron-mobility transistors

Kirsten Emilie Moselund

Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-static control sig ...

2024

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Nano-MOSFET - Foundation of Quantum Computing Part I

Edoardo Charbon

As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Dynamics analysis for DC transformers integration in hybrid AC‐DC power distribution networks

Drazen Dujic, Andrea Cervone, Renan Pillon Barcelos, Jules Christian Georges Macé, Max Dupont

In AC/DC power distributions networks, power converters are interfacing buses to ensure DC voltage regulation and power distribution. Active front ends are used between AC and DC buses and two typical control schemes that can be implemented are voltage reg ...

2023

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

High frequency IGCT operation for DC transformer

Gabriele Ulissi

In spite of the dominance of ac technology for the vast majority of power transmission and distribution since the late 19th century, the past decades have seen an increase in use of dc electrical power. In particular, this has been the case both in high vo ...

EPFL2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors

Thomas Schmaltz

Semiconducting self-assembled monolayers (SAMs) represent highly relevant components for the fabrication of organic thin-film electronics because they enable the precise formation of active it-conjugates in terms of orientation and layer thickness. In this ...

AMER CHEMICAL SOC2021

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

2021

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

Wiley2021

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Georgios Kampitsis

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

2020

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Edoardo Charbon

Cryogenic device models are essential for the reliable design of the cryo-CMOS electronic interface necessary to build future large-scale quantum computers. This paper reports the characterization of the drain-current mismatch of NMOS and PMOS devices fabr ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions

Oleg Yazyev, Michele Pizzochero, Kristians Cernevics

The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated he ...

AMER PHYSICAL SOC2020

Comprehensive Spectral Analysis of PWM Waveforms With Compensated DC link Oscillations

Drazen Dujic, Stefan Milovanovic

In the available literature, including reference books on the topic, the spectral analysis of voltage waveforms obtained through the use of pulse-width modulation relies on the assumption of an ideally flat voltage across the DC link of a considered switch ...

2020

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019