HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

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Publications associées (31)

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Gamma-Blind Fast Neutron Detection for Spent Nuclear Fuel Characterization

Alexander Wolfertz

In this thesis, the development and testing of a system for measuring the axial distribution of fast neutron emission of spent nuclear fuel rods is presented. Emphasis is placed on the novel fast neutron detector used which can reliably work in extremely h ...

EPFL2023

Unit-cell-thick zeolitic imidazolate framework films for membrane application

Yu Han, Deepu Joseph Babu, Kumar Varoon Agrawal, Luis Francisco Villalobos Vazquez de la Parra, Heng-Yu Chi, Shaoxian Li, Qi Liu, Jian Hao, Shuqing Song

Zeolitic imidazolate frameworks (ZIFs) are a subset of metal-organic frameworks with more than 200 characterized crystalline and amorphous networks made of divalent transition metal centres (for example, Zn2+ and Co2+) linked by imidazolate linkers. ZIF th ...

NATURE PORTFOLIO2023

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Sylvain Dunand, Nicolas Würsch, Giulia Rossi, Matthew James Large

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Aïcha Hessler-Wyser, Franz-Josef Haug, Luca Massimiliano Antognini, Julien Hurni, Ezgi Genç, Sofia Libraro, Audrey Marie Isabelle Morisset

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Elsevier2023

Additive and digital manufacturing of transient sensors and bioelectronics

Nicolas Francis Fumeaux

Transient electronics have emerged as a promising class of devices, capable of breaking down without harmful side effects to their environment. They have tremendous potential as bioresorbable electronics for temporary applications in the human body, and as ...

EPFL2023

Investigation and Mitigation of Moisture- and Potential-Induced Degradation Mechanisms of Silicon Heterojunction Solar Cells and Modules

Olatz Arriaga Arruti

Photovoltaic (PV) technology is one of the most promising renewable energy sources. The PV market is dominated by crystalline silicon (c-Si) based technologies, thus ensuring their long-term performance is of paramount importance for manufacturers, investo ...

EPFL2023

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Carrier-selective contacts using metal compounds for crystalline silicon solar cells

Mathieu Gérard Boccard, Julie Amandine Dreon

Solar cells rely on the efficient generation of electrons and holes and the subsequent collection of these photoexcited charge carriers at spatially separated electrodes. High wafer quality is now commonplace for crystalline silicon (c-Si) based solar cell ...

WILEY2023

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Sylvain Dunand, Nicolas Würsch, Giulia Rossi, Matthew James Large

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devic ...

MDPI2022

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