Bulk synthesis of transparent and homogeneous polymeric hybrid materials with ZnO quantum dots and PMMA

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Publications associées (32)

Critical role of H-aggregation for high-efficiency photoinduced charge generation in pristine pentamethine cyanine salts

Jacques-Edouard Moser, Frank Nüesch, George Cameron Fish, Juan Manuel Moreno Naranjo

The mechanism of photoinduced symmetry-breaking charge separation in solid cyanine salts at the base of organic photovoltaic and optoelectronic devices is still debated. Here, we employ femtosecond transient absorption spectroscopy (TAS) to monitor the cha ...

2021

Orientation‐Engineered Small‐Molecule Semiconductors as Dopant‐Free Hole Transporting Materials for Efficient and Stable Perovskite Solar Cells

Michael Graetzel, Miao Chen, Hong Zhang, Zhiwen Zhou

Crystallized p-type small-molecule semiconductors have great potential as efficient and stable hole transporting materials (HTMs) for perovskite solar cells (PSCs) due to their relatively high hole mobility, good stability and tunable HOMOs depending on th ...

2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Interfacial engineering for competitive Dye-Sensitized Solar Cells production

Natalie Flores Diaz

Renewable energy deployment and implementation of a circular economy will play a crucial role in decreasing CO2 emissions to meet the target from the Paris agreement. Dye-sensitized solar cells (DSSCs) can be designed in various colors and transparency for ...

EPFL2021

Solution Processing and Self-Organization of PbS Quantum Dots Passivated with Formamidinium Lead Iodide (FAPbI(3))

Frank Nüesch, Roland Hany

Solution-processed lead sulfide quantum dots (PbS QDs) are very attractive as NIR-active semiconductors for the fabrication of cost-efficient optoelectronic devices. To control the thin film carrier transport, as well as stability, surface passivation is o ...

2020

Reducing Amplified Spontaneous Emission Threshold in CsPbBr3 Quantum Dot Films by Controlling TiO2 Compact Layer

Mohammad Khaja Nazeeruddin

Amplified spontaneous emission (ASE) threshold in CsPbBr3 quantum dot films is systematically reduced by introducing high quality TiO2 compact layer grown by atomic-layer deposition. Uniform and pinhole-free TiO2 films of thickness 10, 20 and 50 nm are use ...

2020

Optimization of front SiNx/ITO stacks for high-efficiency two-side contacted c-Si solar cells with co-annealed front and rear passivating contacts

Christophe Ballif, Sylvain Nicolay, Xavier Niquille, Franz-Josef Haug, Frank Meyer, Andrea Ingenito

In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. In addition to an interfacial silicon oxide (SiOx) and an in-s ...

2020

Suppressing recombination in perovskite solar cells via surface engineering of TiO2 ETL

Michael Graetzel, Shaik Mohammed Zakeeruddin, Manoj Kumar, Pankaj Kumar Yadav, Daniel Prochowicz, Mohammad Mahdi Tavakoli

Hybrid perovskite solar cells (PSCs) have gained significant attention owing to their excellent physicochemical and photovoltaic properties. PSCs typically consist of a perovskite light absorber sandwiched between two carrier selective layers optimized wit ...

PERGAMON-ELSEVIER SCIENCE LTD2020

Lateral transport in silicon solar cells

Christophe Ballif, Gabriel Christmann, Mathieu Gérard Boccard, Jan Haschke

We investigate lateral charge carrier transport in crystalline silicon solar cells. Under typical operation illumination of high-efficiency solar cells, a significant population of electrons and holes exist in the silicon wafer, leading to a non-negligible ...

AIP2020

In situ generation of sub-10 nm silver nanowires under electron beam irradiation in a TEM

Junjie Li

Here, we report a facile irradiation-assisted route to fabricate sub-10 nm Ag nanowires fromoxide supports using a TEM. The obtained Ag nanowires show a tunable length/diameter aspect ratio with a minimum diameter of about 9.5 nm. Moreover, the nucleation ...

Royal Society of Chemistry2020

Optoelectronic and magnetic properties induced by atomic defects in two-dimensional semiconductors

Alessio Scavuzzo

Two-dimensional (2D) materials have attracted increasing attention over the last decade owing to their remarkable mechanical, electrical and optical properties. Following the groundbreaking discovery of graphene, a plethora of other atomically-thin materia ...

EPFL2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

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