Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

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Organic upconversion devices (OUCs) consist of an organic infrared photodetector and an organic visible light-emitting diode (OLED), connected in series. OUCs convert photons from the infrared to the visible and are of use in applications such as process c ...

This dataset accompanies the publication "Best practices in measuring absorption at the macro- and microscale" published in APL Photonics. The data can be used to reproduce original plots in figures 1-4 in the main text and all original plots in the suppor ...

Semiconducting polymers are being studied intensively for optoelectronic device applications, including solution-processed light-emitting diodes (PLEDs). Charge traps in polymers limit the charge transport and thus the PLED efficiency. It is firmly establi ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

Hot exciton materials have the potential to improve the quantum efficiency of organic light-emitting diodes (OLEDs) by promoting high reversed intersystem crossing (hRISC) between a high-lying triplet (T-n, n >= 2) and a radiative singlet (S-m). In recent ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

A porous InGaN/GaN blue light-emitting diode is demonstrated using selective area sublimation. Transmission electron microscopy reveals that the structure is porous down to the Si substrate; however, the porosity is higher in the GaN buffer, while smaller ...

The emergence of wide bandgap power devices has brought the attention back to the flying capacitor (FC) multilevel inverters with a large number of stages, in an effort to increase the power density by minimizing the passive components. The main challenge ...

Over the past decade, lead halide perovskites (LHPs) have received considerable attention thanks to their impressive optoelectronic properties. Today, LHP-based devices are one of the most efficient single-junction solar cells, with power-conversion effici ...

Molecules with inversion of the singlet and triplet excited-state energies are highly promising for the development of organic light-emitting diodes (OLEDs). To date, azaphenalenes are the only class of molecules where these inversions have been identified ...

Self-powered skin optoelectronics fabricated on ultrathin polymer films is emerging as one of the most promising components for the next-generation Internet of Things (IoT) technology. However, a longstanding challenge is the device underperformance owing ...

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the p ...

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the recent publication entitled “Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper ...

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

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On the Response Speed of Narrowband Organic Optical Upconversion Devices

Dataset to accompany publication "Best practices in measuring absorption at the macro- and microscale"

Electron Trap Dynamics in Polymer Light-Emitting Diodes

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Donor-Acceptor-Donor "Hot Exciton" Triads for High Reverse Intersystem Crossing in OLEDs

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

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Porous Nitride Light-Emitting Diodes

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

Ultrafast carrier and quasiparticle dynamics in strongly confined perovskite nanoplatelets

Symmetry-Induced Singlet-Triplet Inversions in Non-Alternant Hydrocarbons

Indoor Self-Powered Perovskite Optoelectronics with Ultraflexible Monochromatic Light Source

GaN vertical power devices on silicon substrates

Heterostructure design and field management in III-N high-electron mobility electronic devices

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Dataset for "Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates"

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes