Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism

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Publications associées (31)

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Materials properties are strictly dependent on their microstructure. The internal symmetries and the disposition of the constituting atoms of a material, which depend on its crystallographic structure, greatly affect its response to mechanical, electromagn ...

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The formation of elemental trigonal tellurium (t-Te) on tellurite glass surfaces exposed to femtosecond laser pulses is discussed. Specifically, the underlying elemental crystallization phenomenon is investigated by altering laser parameters in common tell ...

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Ultrashort laser pulses, i.e., pulses emitted shorter than a picosecond, can tailor material properties by introducing permanent modifications locally in three dimensions. Remarkably, under a certain exposure condition, these modifications are accompanied ...

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Over the last decades, the progress made in the generation of laser pulses shorter than a picosecond (10^-12 s) has allowed us to reach extreme optical power intensities exceeding 10^15 W cm^-2. This tremendous power has triggered an abundance of original ...

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The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

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Semiconductor-based device architectures in multimaterial fibers

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A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

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Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

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