Publications associées à Silicon nitride waveguide or photonic integrated circuit fabrication method

Publications associées (8)

Broadband plasmonic-organic terahertz field sensor on a silicon-on-insulator platform

Ileana-Cristina Benea-Chelmus, Alessandro Tomasino, Francesco Bertot

We propose an innovative configuration for the on-chip detection of terahertz fields relying on a hybrid silicon-organic platform. In particular, we combine silicon waveguides with terahertz antennas and nonlinear optical polymers to perform an integrated ...

IEEE Computer Society2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Transparent Passivating Contacts for Front Side Application in Crystalline Silicon Solar Cells

Josua Andreas Stückelberger

In this thesis, we present the development and characterization of novel approaches to carrier-selective passivating contacts for crystalline silicon (c-Si) solar cells. In our first approach, we benefit from a wide-bandgap material, namely mixed-phase sil ...

EPFL2018

Strength and fracture of silicon second-phase particles in aluminium casting alloys

Martin Guillermo Mueller

The mechanical behaviour of metallic materials that have a microstructure composed of a brittle phase embedded in a ductile matrix is dictated by a complex interplay of factors such as local phase properties, cohesive properties, geometrical characteristic ...

EPFL2017

Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism

Tobias Schneider, Silvija Gradecak

In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopa ...

Amer Inst Physics2015

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

2008

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

Kirsten Emilie Moselund

For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...

EPFL2008