Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

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Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

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Establishing optimal interfacial contact is crucial for enhancing the efficiency of perovskite solar cells (PSCs). However, formation of voids at buried interface of perovskite films often hinders this critical objective. Our investigation reveals that the ...

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Computational Studies on the Stability of Organic-Inorganic Hybrid Halide Lead Perovskites

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Perovskite-based solar cells are currently the most rapidly advancing photovoltaic technology but concerns about their long-term stability are still impeding full-scale commercialization. This thesis provides computational insights into some of the stabili ...

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A thermotropic liquid crystal enables efficient and stable perovskite solar modules

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Perovskite solar cells have seen impressive progress in performance and stability, yet maintaining efficiency while scaling area remains a challenge. Here we find that additives commonly used to passivate large-area perovskite films often co-precipitate du ...

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Utilization of small molecules as passivation materials for perovskite solar cells (PSCs) has gained significant attention recently, with hundreds of small molecules demonstrating passivation effects. In this study, a high-accuracy machine learning model i ...

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Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

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Bandgap-tuneable mixed-halide 3D perovskites are of interest for multi-junction solar cells, but suffer from photoinduced spatial halide segregation. Mixed-halide 2D perovskites are more resistant to halide segregation and are promising coatings for 3D per ...

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In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

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