Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free-space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free space, such as high nonlineari ...
Nowadays, with the increased interest in applications dealing with high-power medium-voltage conversion, there is a strong need to master the design of medium-frequency transformers, which are one of the key components of modern DC transformers. The paper ...
Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...
Institute of Electrical and Electronics Engineers2022
The concept of a multi-source inverter (MSI) based on NPC topology was recently introduced for hybrid-electric powertrains to connect several dc sources to the traction load in a single conversion stage without magnetics. This work proposes a new modulatio ...
The present invention relates to a DC/DC converter (1) for transferring an active power between two DC subsystems (5, 6) comprising: - a first converter stage (3) and a second converter stage (4) both configured to be selectively operated as an active inve ...
IGCTs have successfully demonstrated to be well-suited devices for an application in medium-voltage dc transformers based on LLC resonant converter topology. This application enables unusually high switching frequencies in kHz range thanks to the zero-volt ...
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...
Though models describing the operating mechanism of organic electrochemical transistors (OECTs) have been developed, these models are unable to accurately reproduce OECT electrical characteristics. Here, the authors report a thermodynamic-based framework t ...
High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...
The paper deals with the preparation and investigation of a series of polymer dispersed liquid crystals (PDLCs) based on polysulfone matrix and an azomethine liquid crystal. The PDLC systems were prepared by thermal induced phase separation method. Their m ...
