Yusuf Leblebici, Oliver Peric, Davide Sacchetto, Zuhal Tasdemir
A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018
