We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination velocity results from a higher sensi ...
Minority carriers diffusion currents are particularly important in parasitic substrate couplings of Smart Power ICs. In CMOS technologies the P-substrate potential is imposed by P+ contacts and N-wells by N+ highly doped implantations. The doping concentra ...
We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode, we can invert the sign of the photocurrent showing that the minority photoca ...
The kinetic competition between electron-hole recombination and water oxidation is a key consideration for the development of efficient photoanodes for solar driven water splitting. In this study, we employed three complementary techniques, transient absor ...
