Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

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We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

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Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

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Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Nano-MOSFET - Foundation of Quantum Computing Part I

A charge carrier transport model for donor-acceptor blend layers

Integrated electronics for time-of-flight positron emission tomography photodetectors

Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Impact of enhanced contact doping on minority carriers diffusion currents

Resistless EUV lithography: Photon-induced oxide patterning on silicon

Process modeling and integration of hydrogen and synthetic natural gas production in a kraft pulp mill via black liquor gasification

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

Back Electron-Hole Recombination in Hematite Photoanodes for Water Splitting