Christian André Clément Lafforgue

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The rapid advancement of modern technology has led to a steep rise in global energy demand, posing serious challenges related to climate change and the geopolitical complexities of energy sourcing. In this context, modulators and optical amplifiers have be ...

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material's intrinsic properties. Recent advancements revealed t ...

Chip -scale optical frequency combs enable the generation of highly -coherent pulsed light at gigahertz-level repetition rates, with potential technological impact ranging from telecommunications to sensing and spectroscopy. In combination with techniques ...

We demonstrate broadband difference frequency generation by dispersion engineering in periodically-poled thin-film lithium niobate waveguides. In simulations, we show tunable signal bandwidth from 30 nm to 300 nm. Experimentally, we achieve idler generatio ...

The centrosymmetric structure of stoichiometric silicon nitride inhibits the realization of second-order nonlinear processes in this low-loss, complementary-metal-oxide-semiconductor fabrication-compatible platform. Nevertheless, linear electro-optic modul ...

Thin-film lithium niobate (TFLN) on an insulator is a promising platform for nonlinear photonic integrated circuits (PICs) due to its strong light confinement, high second-order nonlinearity, and flexible quasi-phase-matching for three-wave mixing processe ...

We demonstrate the linear electro-optic effect in a silicon nitride micro-ring in which an effective second order nonlinearity is enabled by optically assisted electrical poling. Charge carriers' separation in the waveguide creates a permanent electric-fie ...

We demonstrate soliton Kerr-comb generation in a high-Q silicon nitride microring with 143 GHz free spectral range pumped at 1970 nm. The resulting low noise ultrafast pulse train displays a 422 nm bandwidth, extending up to 2250 nm. ...

Christian André Clément Lafforgue

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Integration and tunability of rare-earth-doped YSZ for next generation photonic devices

Silicon nitride electric-field poled microresonator modulator

Monolithic silicon nitride electro-optic modulator enabled by optically-assisted poling

Dissipative Kerr soliton generation at 2μm in a silicon nitride microresonator

Broadband difference frequency generation in periodically-poled thin-film lithium niobate

Electric-field poling of a silicon nitride microring resonator for linear electro-optic modulation

Ultrabroadband tunable difference frequency generation in a standardized thin-film lithium niobate platform

Optically assisted electrical poling of silicon nitride integrated resonators

Design rules for frequency conversion in periodically poled thin film lithium niobate waveguides

Mid-IR Soliton Microcomb Generation in Silicon Nitride Microring Resonators