Publications de Alessandro Floriduz

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The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...

GaN-based devices are ubiquitous in everyday life, ranging from InGaN/GaN light-emitting diodes (LEDs) for illumination to AlGaN/GaN high-electron-mobility transistors for compact power supplies. Nevertheless, despite the tremendous development in the past ...

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

Kron reduction (KR) is a methodology for analyzing an electrical network by replacing it with a simpler circuit having less nodes but the same terminal behavior of voltages and currents at target vertices. Existing approaches to instantaneous KR, however, ...

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

In this work, we introduce a p-NiO/LiNiO stack grown via low-temperature deposition processes, offering an effective alternative for creating localized p-type regions in GaN devices. This stack combines a high hole concentration p-NiO film ([h] = 2 × 1019 ...

We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, ...

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

Alessandro Floriduz

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Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

Direct high-temperature MOCVD growth of GaN on foreign substrates

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Approximate Kron Reduction Methods for Electrical Networks With Applications to Plug-and-Play Control of AC Islanded Microgrids

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

p-NiO junction termination extensions for GaN power devices

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs