Publications de Julien Hurni | EPFL Graph Search

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Zinc phosphide (Zn3P2) has been lauded as a promising solar absorber material due to its functional properties and the abundance of zinc and phosphorous. In the last 4 decades, there has not been any significant improvement in the efficiencies of Zn3P2-bas ...

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

This work reports the electrical characterization of ZnSnx Ge1 - xN2 (ZTGN) layers (10% < x < 90%) deposited on glass by combinatorial sputtering and further assesses the performance of silicon heterojunction (SHJ) solar cells featuring them as electron-se ...

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compa ...

This work reports the electrical characterization of ZnSnxGe1-xN2 (ZTGN) layers deposited on glass by sputtering and further assesses for the first time the performance of SHJ solar cells featuring them as electron-selective contacts. Bandgap, conductivity ...

The n-type TOPCon technology is currently the leading approach in the industry. Generally, it involves two high-temperature steps that can result in long cycle times and expensive processes. In this context, we propose a lean manufacturing process based on ...

We investigate rapid thermal processing (RTP) as alternative to the prolonged thermal annealing process used to form tunnel-oxide passivating contacts for silicon solar cells. The thermal treatment is generally followed by hydrogenation to passivate defect ...

Julien Hurni

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Carrier generation and collection in Zn3P2/InP heterojunction solar cells

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Effects of Work Function and Electron Affinity on the Performance of Carrier-Selective Contacts in Silicon Solar Cells Using ZnSnx Ge-1 (-) N-x(2) as a Case Study

Development and characterization of N2O-plasma oxide layers for high-temperature p-type passivating contacts in silicon solar cells

ZnSnxGe1-xN2 as electron-selective contact for silicon heterojunction solar cells

Boron-emitter development for TOPCon c-Si solar cells based on plasma-deposited boron diffusion source and poly-Si(n) passivating contact

Impact of Rapid Thermal Processing on Bulk Lifetime and Surface Recombination Velocity of Crystalline Silicon With Passivating Tunnel Oxide Contacts

nc-SiC by PECVD for High-Temperature Passivating Contacts